參數(shù)資料
型號(hào)： MBM29LV160T-80PBT
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： CONNECTOR ACCESSORY
中文描述： 1M X 16 FLASH 3V PROM, 80 ns, PBGA48
封裝： PLASTIC, FBGA-48
文件頁(yè)數(shù)： 24/60頁(yè)
文件大?。?/td> 767K
代理商： MBM29LV160T-80PBT
24
MBM29LV160T
-80/-90/-12
/MBM29LV160B
-80/-90/-12
DQ
2
Toggle Bit II
This Toggle Bit II, along with DQ
6
, can be used to determine whether the device is in the Embedded Erase
Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause DQ
2
to toggle during the Embedded Erase Algorithm. If the
device is in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause DQ
2
to toggle. When the device is in the erase-suspended-program mode, successive reads from the byte address
of the non-erase suspended sector will indicate a logic “1” at DQ
2
.
DQ
6
is different from DQ
2
in that DQ
6
toggles only when the standard program or Erase, or Erase Suspend
Program operation is in progress.
For example, DQ
2
and DQ
6
can be used together to determine if the erase-suspend-read mode is in progress.
(DQ
2
toggles while DQ
6
does not.) See also Table 10 and Figure 19.
Furthermore, DQ
2
can also be used to determine which sector is being erased. When the device is in the erase
mode, DQ
2
toggles if this bit is read from an erasing sector.
Notes:
1. Performing successive read operations from any address will cause DQ
6
to toggle.
2. Reading the byte address being programmed while in the erase-suspend program mode will indicate
logic “1” at the DQ
2
bit. However, successive reads from the erase-suspended sector will cause DQ
2
to
toggle.
RY/BY
Ready/Busy Pin
The MBM29LV160T/B provides a RY/BY open-drain output pin as a way to indicate to the host system that the
Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with
either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase
operation. When the RY/BY pin is low, the devices will not accept any additional program or erase commands
with the exception of the Erase Suspend command. If the MBM29LV160T/B is placed in an Erase Suspend
mode, the RY/BY output will be high, by means of connecting with a pull-up resister to V
CC
.
During programming, the RY/BY pin is driven low after the rising edge of the fourth WE pulse. During an erase
operation, the RY/BY pin is driven low after the rising edge of the sixth WE pulse. The RY/BY pin will indicate a
busy condition during the RESET pulse. See Figure 11 and 12 for a detailed timing diagram. The RY/BY pin is
pulled high in standby mode.
Since this is an open-drain output, RY/BY pins can be tied together in parallel with a pull-up resistor to V
CC
.
Table 10 Toggle Bit Status
Mode
DQ
7
DQ
6
DQ
2
Program
DQ
7
Toggle
1
Erase
0
Toggle
Toggle
Erase Suspend Read
(Erase Suspended Sector)
(Note 1)
1
1
Toggle
Erase-Suspend Program
DQ
7
Toggle (Note 1)
1 (Note 2)
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV160T-80PBT-SF2 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M xⅴ 8/1M x 16) BIT
MBM29LV160T-80PCV 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M xⅴ 8/1M x 16) BIT
MBM29LV160T-80PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29LV160T-80PFTR 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29LV160T-80PFTY 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M xⅴ 8/1M x 16) BIT
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