參數(shù)資料
型號： MBM29LV160T-90PFTN
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： 16M (2M xⅴ 8/1M x 16) BIT
中文描述： 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： PLASTIC, TSOP1-48
文件頁數(shù)： 18/60頁
文件大?。?/td> 767K
代理商： MBM29LV160T-90PFTN
18
MBM29LV160T
-80/-90/-12
/MBM29LV160B
-80/-90/-12
SPA : Sector Address to be protected. Set sector address (SA) and (A
6
, A
1
, A
0
) = (0, 1, 0).
SD : Sector protection verify data. Output 01H at protected sector addresses and output 00H at unprotected sector
addresses.
*1
.
*2
.
*3
.
*4
.
This command is valid while fast mode.
Addresses from system set to A
0
to A
6
. The other addresses are “Don’t care”.
This command is valid while V
ID
= RESET.
The data" OOH" is also acceptable.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in an improper sequence will reset the device to the
read mode. Table 7 defines the valid register command sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover both
Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that
commands are always written at DQ
0
to DQ
7
and DQ
8
to DQ
15
bits are ignored.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
5
= 1) to read mode, the read/reset
operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor
read cycles retrieve array data from the memory. The device remains enabled for reads until the command
register contents are altered.
The device will automatically power-up in the Read/Reset state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no
spurious alteration of the memory contents occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for specific timing parameters. (See Figure 5.1.)
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufactures and device codes must be accessible while the device resides in the target system. PROM
programmers typically access the signature codes by raising A
9
to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desired system design practice.
Table 8 MBM29LV160T/B Extended Command Definitions
Command
Sequence
Bus
Write
Cycles
Req'd
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Set to Fast
Mode
Word
3
555H
AAH
2AAH
55H
555H
20H
—
—
Byte
AAAH
555H
AAAH
Fast Program *1
Word
2
XXXH
A0H
PA
PD
—
—
—
—
Byte
XXXH
Reset from Fast
Mode *1
Word
2
XXXH
90H
XXXH
F0H *4
—
—
—
—
Byte
XXXH
XXXH
Query
Command *2
Word
2
55H
98H
—
—
—
—
—
—
Byte
AAH
Extended Sector
Protect *3
Word
4
XXXH
60H
SPA
60H
SPA
40H
SPA
SD
Byte
相關(guān)PDF資料
PDF描述
MBM29LV160T-90PN CAP 27UF 25V ELECT FC RADIAL
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV160T-90PFTR 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29LV160T-90PFTY 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M xⅴ 8/1M x 16) BIT
MBM29LV160T-90PN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M xⅴ 8/1M x 16) BIT
MBM29LV160TE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29LV160TE-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
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