參數(shù)資料
型號: MBM29LV160T-90PN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: CAP 27UF 25V ELECT FC RADIAL
中文描述: 1M X 16 FLASH 3V PROM, 90 ns, PDSO46
封裝: PLASTIC, SON-46
文件頁數(shù): 17/60頁
文件大小: 767K
代理商: MBM29LV160T-90PN
17
MBM29LV160T
-80/-90/-12
/MBM29LV160B
-80/-90/-12
Notes:
1. Address bits A
11
to A
19
= X = “H” or “L” for all address commands except or Program Address (PA) and
Sector Address (SA).
2. Bus operations are defined in Tables 2 and 3.
3. RA =Address of the memory location to be read.
PA =Address of the memory location to be programmed. Addresses are latched on the falling edge of
the WE pulse.
SA =Address of the sector to be erased. The combination of A
19
, A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
will
uniquely select any sector.
4. RD =Data read from location RA during read operation.
PD =Data to be programmed at location PA. Data is latched on the rising edge of WE.
5. The system should generate the following address patterns:
Word Mode: 555H or 2AAH to addresses A
0
to A
10
Byte Mode: AAAH or 555H to addresses A
-1
to A
10
6. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
Table 7 MBM29LV160T/B Standard Command Definitions
Command
Sequence
(Notes 1, 2, 3, 5)
Bus
Write
Cycles
Req'd
First Bus
Write Cycle
Second
Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read/Reset
(Note 6)
Word
/Byte
1
XXXH F0H
Read/Reset
(Note 6)
Word
3
555H
AAH
2AAH
55H
555H
F0H
RA
RD
Byte
AAAH
555H
AAAH
Autoselect
Word
3
555H
AAH
2AAH
55H
555H
90H
Byte
AAAH
555H
AAAH
Byte/Word
Program
(Notes 3, 4)
Word
4
555H
AAH
2AAH
55H
555H
A0H
PA
PD
Byte
AAAH
555H
AAAH
Chip Erase
Word
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH
55H
555H
10H
Byte
AAAH
555H
AAAH
AAAH
555H
AAH
Sector Erase
(Note 3)
Word
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH
55H
SA
30H
Byte
AAAH
555H
AAAH
AAAH
555H
Sector Erase
Suspend
Word
/Byte
1
XXXH B0H
Sector Erase
Resume
Word
/Byte
1
XXXH 30H
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