參數(shù)資料
型號(hào): MBM29LV160TE90PBT
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 16M (2M X 8/1M X 16) BIT
中文描述: 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝: PLASTIC, FBGA-48
文件頁數(shù): 47/59頁
文件大小: 653K
代理商: MBM29LV160TE90PBT
MBM29LV160TE/BE
-70/90/12
47
Chip Erase Command Sequence*
(Address/Command) :
555H/AAH
2AAH/55H
555H/AAH
555H/80H
555H/10H
2AAH/55H
Individual Sector/Multlple Sector*
Erase Command Sequence
(Address/Command) :
555H/AAH
2AAH/55H
555H/AAH
555H/80H
Sector Address
/30H
2AAH/55H
Sector Address
/30H
Sector Address
/30H
Additional sector
erase commands
are optional.
Write Erase Command
Sequence
(See Below)
No
Yes
Data = FFH
Data Polling or Toggle Bit
from Device
Start
Erasure Completed
Figure 21 Embedded Erase
TM
Algorithm
* :The sequence is applied for
×
16 mode.
The addresses differ from
×
8 mode.
EMBEDDED ALGORITHM
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參數(shù)描述
MBM29LV160TE90PCV 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
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