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參數(shù)資料
| 型號： | MBM29LV651UE12TN |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 64M (4M x 16) BIT |
| 中文描述： | 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP1-48 |
| 文件頁數(shù)： | 30/57頁 |
| 文件大小： | 625K |
| 代理商： | MBM29LV651UE12TN |
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MBM29LV650UE/651UE-
90/12
30
I
ELECTRICAL CHARACTERISTICS
1.
DC Characteristics
Notes: 1. The l
CC
current listed includes both the DC operating current and the frequency dependent component.
2. l
CC
active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. Applicable for only V
CC
applying.
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max.,
V
CC
q = V
CC
q Max.
–1.0
+1.0
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max.,
V
CC
q = V
CC
q Max.
–1.0
+1.0
μA
I
LIT
A
9
, OE, RESET Inputs Leakage
Current
V
CC
= V
CC
Max.,
A
9
, OE, RESET = 12.5 V
—
35
μA
I
ACC
ACC Accelerated Program Current
V
CC
= V
CC
Max.,
ACC = V
ACC
Max.
—
20
mA
I
CC1
V
CC
Active Current (Note 1)
CE = V
IL
, OE = V
IH
, V
CC
= V
CC
Max.,
V
CC
q = V
CC
q Max., f = 5 MHz
—
16
mA
CE = V
IL
, OE = V
IH
, V
CC
= V
CC
Max.,
V
CC
q = V
CC
q Max., f = 1 MHz
—
7
mA
I
CC2
V
CC
Active Current (Note 2)
CE = V
IL
, OE = V
IH
, V
CC
= V
CC
Max.,
V
CC
q = V
CC
q Max.
—
40
mA
I
CC3
V
CC
Current (Standby)
V
CC
= V
CC
Max., V
CC
q = V
CC
q Max.,
CE = V
CC
±
0.3 V,
RESET = V
CC
±
0.3 V
—
5
μA
I
CC4
V
CC
Current (Standby, RESET)
V
CC
= V
CC
Max., V
CC
q = V
CC
q Max.,
RESET = V
SS
±
0.3 V
—
5
μA
I
CC5
V
CC
Current
(Automatic Sleep Mode) (Note 3)
V
CC
= V
CC
Max., V
CC
q = V
CC
q Max.,
CE = V
SS
±
0.3 V,
RESET = V
CC
±
0.3 V,
V
IN
= V
CC
±
0.3 V or V
SS
±
0.3 V
—
5
μA
V
IL
Input Low Level
—
–0.5
0.6
V
V
IH
Input High Level
—
2.0
V
CC
+ 0.5
V
V
ACC
Voltage for Program Acceleration
—
11.5
12.5
V
V
ID
Voltage for Autoselect, Sector
Protection (A
9
, OE, RESET) (Note 4)
—
11.5
12.5
V
V
OL
Output Low Voltage Level
I
OL
= 4.0 mA, V
CC
= V
CC
Min.,
V
CC
q = V
CC
q Min.
—
0.45
V
V
OH1
Output High Voltage Level
I
OH
= –2.0 mA, V
CC
= V
CC
Min.,
V
CC
q = V
CC
q Min.
2.4
—
V
V
OH2
I
OH
= –100 μA, V
CC
Min.,
V
CC
q = V
CC
q Min.
V
CC
q
–
0.4
—
V
V
LKO
Low V
CC
Lock-Out Voltage
—
2.3
2.5
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29LV651UE12TR | 64M (4M x 16) BIT |
| MBM29LV651UE90TN | 64M (4M x 16) BIT |
| MBM29LV651UE90TR | 64M (4M x 16) BIT |
| MBM29LV652UE | 64M (4M X 16) BIT |
| MBM29LV652UE-12 | 64M (4M X 16) BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29LV651UE12TR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M x 16) BIT |
| MBM29LV651UE-90 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M x 16) BIT |
| MBM29LV651UE90TN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M x 16) BIT |
| MBM29LV651UE90TR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M x 16) BIT |
| MBM29LV652UE | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT |
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