參數(shù)資料
型號(hào): MBM29LV800TA-70
廠商: Fujitsu Limited
英文描述: 8M (1M X 8/512K X 16) BIT
中文描述: 800萬(wàn)(100萬(wàn)X 8/512K × 16)位
文件頁(yè)數(shù): 10/59頁(yè)
文件大?。?/td> 608K
代理商: MBM29LV800TA-70
MBM29LV800TA
-70/-90/-12
/MBM29LV800BA
-70/-90/-12
10
I
ORDERING INFORMATION
Standard Products
Fujitsu standard products are available in several packages. The order number is formed by a combination of:
MBM29LV800
T
A
-70
PFTN
DEVICE NUMBER/DESCRIPTION
MBM29LV800
8Mega-bit (1M
×
8-Bit or 512K
×
16-Bit) CMOS Flash Memory
3.0 V-only Read, Program, and Erase
PACKAGE TYPE
PFTN =
48-Pin Thin Small Outline Package
(TSOP) Standard Pinout
48-Pin Thin Small Outline Package
(TSOP) Reverse Pinout
44-Pin Small Outline Package
48-Ball Fine Pitch Ball Grid Array
Package (FBGA:BGA-48P-M02)
PBT-SF2 =48-Ball Fine Pitch Ball Grid Array
Package (FBGA:BGA-48P-M12)
PFTR =
PF =
PBT =
SPEED OPTION
See Product Selector Guide
Device Revision
BOOT CODE SECTOR ARCHITECTURE
T = Top sector
B = Bottom sector
相關(guān)PDF資料
PDF描述
MBM29LV800TA-90 8M (1M X 8/512K X 16) BIT
MBM29LV800B 8M (1M ×8/512K ×16) Bit Flash Memory( 單5V 電源電壓1M ×8/512K ×16位閃速存儲(chǔ)器)
MBM29LV800T 8M (1M ×8/512K ×16) Bit Flash Memory( 單5V 電源電壓1M ×8/512K ×16位閃速存儲(chǔ)器)
MBM29PDS322TE10PBT Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
MBM29PDS322TE10 32M (2M x 16) BIT Page Dual Operation
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV800TA-90 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29LV800TE 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
MBM29LV800TE60PBT 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
MBM29LV800TE60PCV 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
MBM29LV800TE60TN 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT