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參數(shù)資料
| 型號： | MBM29LV800TE90TN |
| 廠商： | Fujitsu Limited |
| 英文描述： | 8M (1M x 8/512 K x 16) BIT |
| 中文描述： | 8米（3米x五百一十二分之八畝× 16）位 |
| 文件頁數(shù)： | 3/59頁 |
| 文件大?。?/td> | 608K |
| 代理商： | MBM29LV800TE90TN |
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3
MBM29LV800TA
-70/-90/-12
/MBM29LV800BA
-70/-90/-12
I
GENERAL DESCRIPTION
The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K
words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP and 48-ball FBGA
packages. These devices are designed to be programmed in-system with the standard system 3.0 V V
CC
supply.
12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also be reprogrammed
in standard EPROM programmers.
The standard MBM29LV800TA/BA offer access times 70 ns and 120 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29LV800TA/BA are pin and command set compatible with JEDEC standard E
2
PROMs. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the devices
is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV800TA/BA are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV800TA/BA are erased when shipped from the
factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
7
,
by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
Fujitsu’s Flash technology combines years of EPROM and E
2
PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29LV800TA/BA memories electrically erase the entire chip
or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one
byte/word at a time using the EPROM programming mechanism of hot electron injection.
相關PDF資料 |
PDF描述 |
|---|---|
| MBM29LV800TE70TN | 8M (1M x 8/512 K x 16) BIT |
| MBM29LV800BA-12 | Multi-Color LED; Bulb Size:T-1 3/4; LED Color:Red/Green; Luminous Intensity:12ucd; Viewing Angle:70 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-25 C to +85 C; Color:Red/Green RoHS Compliant: Yes |
| MBM29LV800BA-70 | LED Lamp; Bulb Size:T-1; LED Color:Red; Luminous Intensity:180ucd; Viewing Angle:80 ; Forward Current:20mA; Forward Voltage:2.8V; Operating Temperature Range:-20 C to +75 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| MBM29LV800TA-70 | 8M (1M X 8/512K X 16) BIT |
| MBM29LV800TA-90 | 8M (1M X 8/512K X 16) BIT |
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參數(shù)描述 |
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| MBM30035001 | 制造商:LG Corporation 功能描述:Card,Technical |
| MBM30035015 | 制造商:LG Corporation 功能描述:Card,Technical |
| MBM300A6 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES |
| MBM300GR12A | 制造商:n/a 功能描述:IGBT Module |
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