參數(shù)資料
型號: MBM29PL32TM90TN-E1
廠商: SPANSION LLC
元件分類: PROM
英文描述: 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 16/72頁
文件大?。?/td> 450K
代理商: MBM29PL32TM90TN-E1
Retired Product
DS05-20907-4E_July 31, 2007
MBM29PL32TM/BM90/10
23
Common Flash Memory Interface Code
(Continued)
A6 to A0
DQ15 to DQ0
Description
10h
11h
12h
0051h
0052h
0059h
Query-unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
(02h = Fujitsu standard)
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
Alternate OEM Command Set
(00h = not applicable)
19h
1Ah
0000h
Address for Alternate OEM Extended Table
(00h = not applicable)
1Bh
0027h
VCC Min (write/erase)
DQ7 to DQ4: 1 V/bit,
DQ3 to DQ0: 100 mV/bit
1Ch
0036h
VCC Max (write/erase)
DQ7 to DQ4: 1 V/bit,
DQ3 to DQ0: 100 mV/bit
1Dh
0000h
VPP Min voltage (00h = no Vpp pin)
1Eh
0000h
VPP Max voltage (00h =no Vpp pin)
1Fh
0007h
Typical timeout per single write 2N
μs
20h
0007h
Typical timeout for Min size buffer write 2N
μs
21h
000Ah
Typical timeout per individual sector erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms
23h
0001h
Max timeout for write 2N times typical
24h
0005h
Max timeout for buffer write 2N times typical
25h
0004h
Max timeout per individual sector erase 2N times typical
26h
0000h
Max timeout for full chip erase 2N times typical
27h
0016h
Device Size = 2N byte
28h
29h
0002h
0000h
Flash Device Interface description
02h :
× 8/ × 16
2Ah
2Bh
0005h
0000h
Max number of byte in
multi-byte write = 2N
2Ch
0002h
Number of Erase Block Regions within device (02h = Boot)
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
31h
32h
33h
34h
003Eh
0000h
0001h
Erase Block Region 2 Information
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