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參數(shù)資料
| 型號： | MBN400GR12A |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 400 A, 1200 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 125K |
| 代理商： | MBN400GR12A |
PDE-N400GR12A-0
VGE
=15V14V13V12V
800
0
2
468
10
600
400
200
0
11V
TYPICAL
10V
9V
Tc
=25°C
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Pc
=2500W
VGE
=15V14V13V12V
800
0
2
468
10
600
400
200
0
11V
TYPICAL
10V
9V
Tc
=125°C
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic
=400A
Ic
=800A
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Tc
=25°C
Ic
=400A
Ic
=800A
10
8
6
4
2
0
5
10
15
20
TYPICAL
Collector
to
Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Tc
=125°C
20
15
10
5
0
800
1600
2400
4000
3200
TYPICAL
Vcc
=600V
Ic
=400A
Tc
=25°C
Gate
to
Emitter
V
oltage
,
V
GE
(V)
Gate Charge, QG (nC)
Gate charge characteristics
800
600
400
200
0
1
234
5
TYPICAL
F
orw
ard
Current,
I
F
(A)
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
VGE
=0V
Tc
=25°C
Tc
=125°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBN400GR12AW | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
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| MBN400GS12AW | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-channel IGBT |
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