參數(shù)資料
型號(hào): MBR1045PBF
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-3, Rectifier Diode
中文描述: Schottky (Diodes & Rectifiers) 10 Amp 45 Volt
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 149K
代理商: MBR1045PBF
VS-MBR10...PbF Series, VS-MBR10...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
3
Document Number: 94284
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
V
FM
- Forward Voltage Drop (V)
I
F
1.4
0.2
0.4
0.6
0.
8
1.0
1.2
1.6
1
10
100
1.
8
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
V
R
- Reverse Voltage (V)
I
R
0.0001
0.001
0.01
0.1
1
0
20
25
35
45
10
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
5
10
15
30
40
1000
V
R
- Reverse Voltage (V)
C
T
0
100
10
30
40
20
50
T
J
= 25 °C
t
1
- Rectangular Pulse Duration (s)
Z
t
0.1
1
10
0.00001
0.0001
0.001
0.01
100
.
P
DM
t
1
t
2
N
otes:
1. D
u
ty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single p
u
lse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
0.1
1.0
10
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