- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385559 > MBR1060 (ON SEMICONDUCTOR) Schottky Barrier Power Rectifier(10A,60V肖特基勢壘功率整流器) PDF資料下載
參數(shù)資料
| 型號： | MBR1060 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Power Rectifier(10A,60V肖特基勢壘功率整流器) |
| 中文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC, CASE 221B-04, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | MBR1060 |
MBR1060, MBR1080, MBR1090, MBR10100
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBR
Unit
1060
1080
1090
10100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60
80
90
100
V
Average Rectified Forward Current (Rated V
R
) T
C
= 133
°
C
I
F(AV)
10
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 133
°
C
I
FRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
0.5
A
Operating Junction Temperature (Note 1)
T
J
65 to +175
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
dv/dt
10,000
V/ s
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, JunctiontoCase
R
JC
2.0
°
C/W
Maximum Thermal Resistance, JunctiontoAmbient
R
JA
60
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
C
= 125
°
C)
(i
F
= 10 Amps, T
C
= 25
°
C)
(i
F
= 20 Amps, T
C
= 125
°
C)
(i
F
= 20 Amps, T
C
= 25
°
C)
v
F
0.7
0.8
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
C
= 125
°
C)
(Rated dc Voltage, T
C
= 25
°
C)
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
6.0
0.10
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR10100 | Schottky Barrier Power Rectifier(10A,100V肖特基勢壘功率整流器) |
| MBR1080 | Schottky Barrier Power Rectifier(10A,80V肖特基勢壘功率整流器) |
| MBR1090 | Schottky Barrier Power Rectifier(10A,90V肖特基勢壘功率整流器) |
| MBR120ESFT1 | Surface Mount Schottky Power Rectifier(表面安裝的肖特基功率整流器) |
| MBR120ESFT3 | Surface Mount Schottky Power Rectifier(表面安裝的肖特基功率整流器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR1060 _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR1060 C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 60V 10A 2-Pin(2+Tab) TO-220AC Tube |
| MBR1060 | 制造商:Fairchild Semiconductor Corporation 功能描述:SCHOTTKY DIODE |
| MBR1060/45 | 功能描述:肖特基二極管與整流器 10 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1060_Q | 功能描述:肖特基二極管與整流器 13 amp Rectifier Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。