參數(shù)資料
型號: MBR150
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode
中文描述: Schottky (Diodes & Rectifiers) 1.0 Amp 50 Volt
文件頁數(shù): 4/5頁
文件大小: 32K
代理商: MBR150
MBR150, MBR160
Bulletin PD-20589 rev. B 03/03
4
www.irf.com
Fig. 5 - Forward Power Loss Characteristics
Fig. 4 - Maximum Ambient Temperature Vs. Average Forward
Current, Printed Circuit Board Mounted
Fig. 6 - Maximum Non-Repetitive Surge Current
Average Forward Current - I
F(AV)
(A)
A
A
Square Wave Pulse Duration - t
p
(microsec)
N
F
10
100
1000
10
100
1000
10000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
Average Forward Current - I
F(AV)
(A)
0
20
40
60
80
100
120
140
160
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
DC
Square wave (D = 0.50)
80% Rated Vr applied
see note (2)
0
0.2
0.4
0.6
0.8
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
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