參數(shù)資料
型號: MBR150TR
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode
中文描述: Schottky (Diodes & Rectifiers) 1.0 Amp 50 Volt
文件頁數(shù): 2/5頁
文件大?。?/td> 32K
代理商: MBR150TR
MBR150, MBR160
Bulletin PD-20589 rev. B 03/03
2
www.irf.com
V
R
V
RWM
Max.
Working Peak Reverse Voltage (V)
Max.
DC Reverse Voltage (V)
50
60
Voltage Ratings
Part number
V
FM
Max. Forward Voltage Drop
* See Fig. 1
0.75
0.9
1.0
0.65
0.75
0.82
0.5
5
V
V
V
V
V
V
@ 1A
@ 2A
@ 3A
@ 1A
@ 2A
@ 3A
T
J
= 25 °C
T
J
= 100°C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
(1)
T
J
= 25 °C
T
J
= 125 °C
I
RM
Max. Reverse Leakage Current
* See Fig. 2
mA
mA
(1)
V
R
= rated V
R
10
55
mA
pF
C
T
L
S
dv/dt Max. Voltage Rate of Change
Typical Junction Capacitance
Typical Series Inductance
8.0
nH
10000
V/μs
(Rated V
R
)
Electrical Specifications
T
J
T
stg
R
thJL
Max. Thermal Resistance Junction
to Lead
wt
Approximate Weight
Case Style
Max. Junction Temperature Range(*)
- 40 to 150
°C
Max. Storage Temperature Range
- 40 to 150
°C
80
°C/W DC operation (*See Fig. 4)
(**)
0.33(0.012) g (oz.)
DO-204AL(DO-41)
Thermal-Mechanical Specifications
MBR150
MBR160
Parameters
Value
Units Conditions
Parameters
Value
Units Conditions
(1) Pulse Width < 300μs, Duty Cycle <2%
(**) Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from package
I
F(AV)
Max. Average Forward Current
* See Fig. 4
I
FSM
Surge Current * See Fig. 6
1.0
A
50% duty cycle @ T
C
= 75°C, rectangular wave form
Max. Peak One Cycle Non-Repetitive
150
5μs Sine or 3μs Rect. pulse
25
10ms Sine or 6ms Rect. pulse
E
AS
I
AR
Non-Repetitive Avalanche Energy
2.0
mJ
T
J
= 25 °C, I
AS
= 1 Amps, L = 4 mH
Current decaying linearly to zero in 1 μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Repetitive Avalanche Current
1.0
A
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM
applied
A
Parameters
Value
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
Rth( j-a)
(*) dPtot
dTj
1
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