參數(shù)資料
型號: MBR1550CT
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: SCHOTTKY BARRIER RECTIFIER
中文描述: 肖特基整流
文件頁數(shù): 1/2頁
文件大小: 82K
代理商: MBR1550CT
MBR1535CT THRU MBR1560CT
SCHOTTKY RECTIFIER
Reverse Voltage -
35 to 60 Volts
Forward Current -
15.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability,
low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Dual rectifier construction, positive center tap
Guardring for transient protection
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
Case:
JEDEC TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
5 in. - lbs. max.
Weight:
0.08 ounces, 2.24 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MBR1535CT
MBR1545CT
MBR1550CT
MBR1560CT
UNITS
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=105°C
Peak repetitive forward current at T
C
=105°C per leg
(rated V
R
, 20KH
Z
sq.wave)
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load per leg (JEDEC method)
Peak repetitive reverse surge current per leg
(NOTE 1)
Maximum instantaneous forward voltage
per leg at
(NOTE 2)
V
RRM
V
RWM
V
DC
35
35
35
45
45
45
50
50
50
60
60
60
Volts
Volts
Volts
I
(AV)
15.0
Amps
I
FRM
15.0
Amps
I
FSM
150.0
Amps
I
RRM
1.0
_
0.5
0.75
0.65
_
_
Amps
I
F
=7.5A,T
C
=25°C
I
F
=7.5A,T
C
=125°C
I
F
=15A,T
C
=25°C
I
F
=15A,T
C
=125°C
0.57
0.84
0.72
V
F
Volts
Maximum instantaneous reverse current at rated
DC blocking voltage per leg
T
C
=25°C
I
R
0.1
15.0
1.0
50.0
mA
(NOTE 2)
T
C
=125°C
Voltage rate of change, (rated V
R
)
Maximum thermal resistance per leg
(NOTE 3)
dv/dt
R
Θ
JA
R
Θ
JC
T
J
T
STG
10,000
60.0
3.0
-65 to +150
-65 to +175
V/
μ
s
°C/W
°C
°C
Operating junction temperature range
Storage temperature range
NOTES:
(1) 2.0
μ
s pulse width, f=1.0 KH
(2) 300
μ
s, pulse width, 1% duty cycle
(3) Thermal resistance from junction to case and thermal resistance from junction to ambient
4/98
0.415 (10.54) MAX.
0.148 (3.74)DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
0.110 (2.79)
0.100 (2.54)
PIN
2
1
3
PIN 1
PIN 3
CASE
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.105 (2.67)
0.095 (2.41)
0.635 (16.13)
0.625 (15.87)
0.560 (14.22)
0.530 (13.46)
PIN 2
0.370 (9.40)
0.360 (9.14)
TO-220AB
Dimensions in inches and (millimeters)
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