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參數(shù)資料
| 型號(hào)： | MBR2035CTPBF |
| 廠(chǎng)商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Diode Schottky 35V 20A 3-Pin(3+Tab) TO-220AB |
| 中文描述： | Schottky (Diodes & Rectifiers) 20 Amp 35 Volt Common Cathode |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | MBR2035CTPBF |
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 94288
Schottky Rectifier, 2 x 10 A
FEATURES
150 °C T
J
operation
Low forward voltage drop
High frequency operation
High
purity,
encapsulation
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
high
for
temperature
enhanced
epoxy
mechanical
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 10 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
Common cathode
8 mJ
Anode
1
3
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
I
F(AV)
V
RRM
I
FRM
I
FSM
V
F
T
J
Rectangular waveform (per device)
20
A
35/45
V
T
C
= 135 °C (per leg)
t
p
= 5 μs sine
10 A
pk
, T
J
= 125 °C
20
A
1060
0.57
V
Range
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse
voltage
Maximum working peak
reverse voltage
SYMBOL
VS-MBR2035CTPbF
VS-MBR2035CT-N3
VS-MBR2045CTPbF
VS-MBR2045CT-N3
UNITS
V
R
35
35
45
45
V
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
per leg
I
F(AV)
T
C
= 135 °C, rated V
R
10
A
per device
20
Peak repetitive forward current per leg
I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 135 °C
20
Non-repetitive peak surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated V
RRM
applied
1060
Surge applied at rated load condition half wave,
single phase, 60 Hz
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
T
J
= 25 °C, I
AS
= 2 A, L = 4 mH
150
Repetitive avalanche current per leg
I
AR
2
Non-repetitive avalanche energy per leg
E
AS
8
mJ
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| MBR2035CTPBF_12 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 10 A |
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