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參數(shù)資料
| 型號(hào)： | MBR2045CT |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Power Rectifier(20A,45V肖特基勢(shì)壘功率整流器) |
| 中文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | MBR2045CT |
MBR2045CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current
Per Device
Per Diode (T
C
= 165
°
C)
I
F(AV)
20
10
A
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, T
C
= 163
°
C)
I
FRM
20
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
See Figure 11
I
RRM
1.0
A
Storage Temperature Range
T
stg
65 to +175
°
C
Operating Junction Temperature (Note 1)
T
J
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
dv/dt
1000
V/ s
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Thermal Resistance, JunctiontoCase (Min. Pad)
R
JC
2.0
°
C/W
Maximum Thermal Resistance, JunctiontoAmbient (Min. Pad)
R
JA
60
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
J
= 125
°
C)
(i
F
= 20 Amps, T
J
= 125
°
C)
(i
F
= 20 Amps, T
J
= 25
°
C)
v
F
0.50
0.67
0.71
0.57
0.72
0.84
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 125
°
C)
(Rated dc Voltage, T
J
= 25
°
C)
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
10.4
0.02
15
0.1
mA
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