參數(shù)資料
型號(hào)： MBR2535CT
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 參考電壓二極管
英文描述： 30 Ampere Schottky Barrier Rectifiers（Peak Repetitive Reverse Voltage：35V）(30A肖特基勢(shì)壘整流器（重復(fù)峰值反向電壓：35V）)
中文描述： 25 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 35K
代理商： MBR2535CT
M
MBR2535CT - MBR2560CT, Rev. A
MBR2535CT - MBR2560CT
30 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
A
= 130
°
C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 KHz) @ T
A
= 130
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
30
A
i
f(repetitive)
30
A
i
f(surge)
150
A
P
D
2.0
16.6
60
1.5
W
mW/
°
C
°
C/W
°
C/W
°
C
°
C
R
θ
JA
R
θ
JL
T
stg
T
J
-65 to +175
-65 to +150
Parameter
Device
Units
2535CT
35
24
35
2545CT
45
31
45
2550CT
50
35
50
2560CT
60
42
60
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage
Voltage Rate of Change (Rated V
R
)
Maximum Reverse Current
@ rated V
R
(Rated V
R
)
10,000
V/uS
T
A
= 25
°
C
T
A
= 125
°
C
0.2
40
1.0
50
mA
mA
Maximum Forward Voltage
I
F =
15 A, T
C
= 25
°
C
I
F =
15 A, T
C
= 125
°
C
I
F =
30 A, T
C
= 25
°
C
I
F =
30 A, T
C
= 125
°
C
Peak Repetitive Reverse Surge
Current
2.0 us Pulse Width, f = 1.0 KHz
-
-
0.82
0.73
0.75
0.65
-
-
V
V
V
V
1.0
0.5
A
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
TO-220AB
1
2
3
0.412(10.5)
MAX
0.103(2.62)
0.113(2.87)
0.14(3.56)
0.16(4.06)
0.587(14.9)
0.594(15.1)
0.53(13.46)
0.56(14.22)
0.027(0.68)
0.037(0.94)
0.095(2.41)
0.105(2.67)
0.148(3.74)
0.154(3.91)
Dimensions are in: inches (mm)
+
CASE
PIN 2
PIN 3
PIN 1
0.014(0.35)
0.025(0.64)
0.10(2.54)
0.11(2.79)
0.23(5.84)
0.27(6.86)
0.045(1.14)
0.055(1.40)
0.175(4.44)
0.185(4.70)
Discrete POWE R & Signal
Technologies
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR2535CT/45 功能描述:肖特基二極管與整流器 25 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR2535CT_Q 功能描述:肖特基二極管與整流器 24 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR2535CT-01 制造商:Fairchild Semiconductor Corporation 功能描述:
MBR2535CT-1 功能描述:肖特基二極管與整流器 30 Amp 35 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR2535CT-1PBF 制造商:Vishay Angstrohm 功能描述:Diode Schottky 35V 30A 3-Pin(3+Tab) TO-262 Tube
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