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參數(shù)資料
| 型號： | MBRA140TR |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE |
| 封裝： | SMA, SMILILAR TO D-64, 2 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MBRA140TR |
www.vishay.com
For technical questions, contact: diodestech@vishay.com
Document Number: 94301
2
Revision: 04-Mar-10
VS-MBRA140TRPbF
Vishay High Power Products Schottky Rectifier, 1.0 A
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward voltage drop
See fig. 1
VFM (1)
1 A
TJ = 25 °C
0.55
V
2 A
0.71
1 A
TJ = 100 °C
0.5
2 A
0.65
1 A
TJ = 125 °C
0.49
2 A
0.63
Maximum reverse leakage current
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
0.5
mA
TJ = 100 °C
10
TJ = 125 °C
26
Threshold voltage
VF(TO)
TJ = TJ maximum
0.36
V
Forward slope resistance
rt
104
m
Ω
Typical junction capacitance
CT
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
38
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
2.0
nH
Maximum voltage rate of change
dV/dt
Rated VR
10 000
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
- 55 to 150
°C
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
See fig. 4
35
°C/W
Maximum thermal resistance,
junction to ambient
RthJA
80
Approximate weight
0.07
g
0.002
oz.
Device marking
Case style SMA (similar D-64)
V14
dP
tot
dT
J
-------------
1
R
thJA
--------------
<
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