參數(shù)資料
型號: MBRB3030CTLTRLP
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Schottky 30V 30A 3-Pin(2+Tab) D2PAK T/R
中文描述: Schottky (Diodes & Rectifiers) 30 Amp 30 Volt Common Cathode
文件頁數(shù): 1/8頁
文件大小: 168K
代理商: MBRB3030CTLTRLP
Document Number: 94310
Revision: 16-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
Schottky Rectifier, 2 x 15 A
VS-MBRB30..CTPbF, VS-MBR30..CT-1PbF Series
Vishay High Power Products
FEATURES
150 °C T
J
operation
Low forward voltage drop
High frequency operation
Center tap D
2
PAK and TO-262 packages
High
purity,
high
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
temperature
epoxy
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 15 A
35 V/45 V
100 mA at 125 °C
V
S
-MBRB
3
0..CTP
b
F
D
2
PAK
TO-262
V
S
-MBR
3
0..CT-1P
b
F
Ba
s
e
common
cathode
Anode
Anode
Common
cathode
1
3
2
2
Ba
s
e
common
cathode
Anode
Anode
Common
cathode
1
3
2
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform (per device)
T
C
= 123 °C (per leg)
VALUES
30
30
35/45
1020
0.6
- 65 to 150
UNITS
A
V
A
V
°C
t
p
= 5 μs sine
20 Apk, T
J
= 125 °C
Range
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-MBRB3035CTPbF
VS-MBR3035CT-1PbF
VS-MBRB3045CTPbF
VS-MBR3045CT-1PbF
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
V
R
35
45
V
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
15
30
30
UNITS
Maximum average
forward current
per leg
I
F(AV)
T
C
= 123 °C, rated V
R
A
per device
Peak repetitive forward current per leg
I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 123 °C
5 μs sine or 3 μs
rect. pulse
and with rated V
RRM
applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
T
J
= 25 °C, I
AS
= 2 A, L = 5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Non-repetitive peak surge current
I
FSM
Following any rated load condition
1020
200
Non-repetitive avalanche energy per leg
E
AS
10
mJ
Repetitive avalanche current per leg
I
AR
2
A
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