參數(shù)資料
型號： MBRB30H60CT-E3/31
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 2/5頁
文件大?。?/td> 153K
代理商： MBRB30H60CT-E3/31
www.vishay.com
2
Document Number 88866
22-Aug-06
Vishay General Semiconductor
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Electrostatic discharge capacitor voltage Human
body model: C = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
VAC
1500
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR30H35CT
MBR30H45CT
MBR30H50CT
MBR30H60CT
UNIT
TYP
MAX
TYP
MAX
Maximum instantaneous forward
voltage per diode (1)
at IF = 15 A
at IF = 30 A
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VF
-
0.49
-
0.62
0.56
0.73
0.67
-
0.55
-
0.68
0.59
0.83
0.71
V
Maximum instantaneous reverse
current at rated DC blocking
voltage per diode (1)
Tj = 25 °C
Tj = 125 °C
IR
-
5.0
80
15
-
4.0
60
15
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Thermal resistance from junction to case per diode
RθJC
1.5
4.5
1.5
°C/W
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H35CT
MBR30H45CT
MBR30H50CT MBR30H60CT
UNIT
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR30H45CT-E3/45
1.85
45
50/Tube
Tube
ITO-220AB
MBRF30H45CT-E3/45
1.99
45
50/Tube
Tube
TO-263AB
MBRB30H45CT-E3/45
1.35
45
50/Tube
Tube
TO-263AB
MBRB30H45CT-E3/81
1.35
81
800/Reel
Tape Reel
相關(guān)PDF資料
PDF描述
MBRB4045CTPBF 20 A, 45 V, SILICON, RECTIFIER DIODE
MBRF10100 10 A, SILICON, RECTIFIER DIODE, TO-220AC
MBRF10150-G 10 A, SILICON, RECTIFIER DIODE, TO-220AC
MBRF1045CT 10 A, SILICON, RECTIFIER DIODE, TO-220AB
MBRF10H150CT 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBRB30H60CTHE3/81 功能描述:肖特基二極管與整流器 60 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRB30H60CTT4G 功能描述:肖特基二極管與整流器 30A/60V H-SERIES D2PAK RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRB30H80CT-1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier 80 V, 30 A
MBRB30H80CT-1G 功能描述:肖特基二極管與整流器 30A 80V H-SERIES I2PAK RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBRB30H90CT 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier
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