參數(shù)資料
型號: MBRD350T4
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SWITCHMODE Power Rectifiers
中文描述: 3 A, 50 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù): 2/4頁
文件大?。?/td> 93K
代理商: MBRD350T4
2
Rectifier Device Data
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (2)
iF = 3 Amps, TC = +25
°
C
iF = 3 Amps, TC = +125
°
C
iF = 6 Amps, TC = +25
°
C
iF = 6 Amps, TC = +125
°
C
VF
0.6
0.45
0.7
0.625
Volts
Maximum Instantaneous Reverse Current (2)
(Rated dc Voltage, TC = +25
°
C)
(Rated dc Voltage, TC = +125
°
C)
(2) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
2.0%.
iR
0.2
20
mA
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
Figure 3. Average Power Dissipation
0.7
1.0
0.1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
10
VR, REVERSE VOLTAGE (VOLTS)
40
70
0
20
10
4.0
2.0
0.1
0.04
0.02
0.01
0.004
0.002
0.001
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
1.0
0
10
8.0
6.0
4.0
2.0
0
2.0
i
I
R
P
1.0
0.4
0.2
0.3
0.5
0.6
0.8
0.9
50
60
10
20
30
40
100
3.0
4.0
5.0
6.0
7.0
10
0.1
1.1
8.0
9.0
9.0
7.0
5.0
3.0
1.0
,
0.2
0.4
1.0
TJ = 25
°
C
150
°
C
125
°
C
75
°
C
TJ = 150
°
C
IPK/IAV = 20
SINE
WAVE
SQUARE
WAVE
dc
10
5
TJ = 150
°
C
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficient below rated VR.
125
°
C
100
°
C
75
°
C
25
°
C
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