參數(shù)資料
型號: MBRD660CTTRPBF
廠商: VISHAY SEMICONDUCTORS
元件分類: 激光器
英文描述: DIODE 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode
中文描述: Schottky (Diodes & Rectifiers) 6.0 Amp 60 Volt
文件頁數(shù): 3/6頁
文件大小: 65K
代理商: MBRD660CTTRPBF
MBRD650CT, MBRD660CT
Bulletin PD-20755 rev. C 03/03
3
www.irf.com
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
1000
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
Forward Voltage Drop - V
FM
(V)
I
F
(
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj = 150C
Tj = 125C
Tj = 100C
Tj = 25C
Reverse Voltage - V
R
(V)
0.001
0.01
0.1
1
10
100
0
10
20
30
40
50
60
125
C
100
C
75
C
50
C
25
C
Tj = 150
C
Reverse Voltage - V
R
(V)
T
10
100
0
10
20
30
40
50
60
Tj = 25
C
t
1
, Rectangular Pulse Duration (Seconds)
T
t
0.1
0.00001
1
10
0.0001
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x Z thJC + Tc
2
t
1
t
PDM
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