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參數(shù)資料
| 型號： | MBRF30H150CT-E3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 113K |
| 代理商： | MBRF30H150CT-E3/45 |
MBR30H150CT, MBRF30H150CT & SB30H150CT-1
Vishay General Semiconductor
Document Number: 88865
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
FEATURES
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque:
10 in-lbs maximum
Polarity:
As marked
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
2 x 15 A
150 V
260 A
0.75 V
175 °C
ITO-220AB
TO-262AA
MBR30H150CT
MBRF30H150CT
SB30H150CT-1
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
1
2
3
1
2
3
1
2
3
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H150CT
UNIT
Maximum repetitive peak reverse voltage
V
RRM
V
RWM
V
DC
150
V
Working peak reverse voltage
150
V
Maximum DC blocking voltage
150
V
Maximum average forward rectified current
total device
per diode
I
F(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
260
A
Peak repetitive reverse current per diode at t
p
= 2 μs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 μs waveform)
I
RRM
E
RSM
E
AS
dV/dt
1.0
A
10
mJ
Non-repetitive avalanche energy per diode at 25 °C, I
AS
= 2.0 A, L = 10 mH
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
20
mJ
10 000
V/μs
T
J
, T
STG
V
AC
- 65 to + 175
°C
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
1500
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRF30H150CTG | 功能描述:二極管 - 通用，功率，開關(guān) 30A 150V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MBRF30H150CTG_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier |
| MBRF30H35CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRF30H45CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRF30H45CT-E3/45 | 功能描述:肖特基二極管與整流器 45 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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