參數(shù)資料
型號(hào): MBRS1540T3
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Barrier Power Rectifier(1.5A,40V表面安裝肖特基勢(shì)壘功率整流管)
中文描述: 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AA
封裝: PLASTIC, CASE 403A-03, SMB, 2 PIN
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 65K
代理商: MBRS1540T3
MBRS1540T3
http://onsemi.com
4
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
Figure 9. Thermal Response — Junction to Case
Figure 10. Thermal Response — Junction to Ambient
30
0
V
R
, REVERSE VOLTAGE (VOLTS)
1000
100
10
V
R
, DC REVERSE VOLTAGE (VOLTS)
25
40
0
105
85
75
65
C
T
J
15
5.0
10
20
25
35
40
30
35
5.0
10
20
15
95
115
125
,
°
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation:
T
J
= T
Jmax
r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
R
tja
= 24
°
C/W
43
°
C/W
63
°
C/W
80
°
C/W
93
°
C/W
T
J
= 25
°
C
0.1
0.00001
t, TIME (s)
1.0E+00
1.0E01
1.0E02
1.0E03
1.0E04
R
T
0.0001
0.001
0.01
,
1.0
10
100
1000
50%
20%
10%
5.0%
2.0%
1.0%
R
tjl(t)
= R
tjl*r(t)
0.1
0.00001
t, TIME (s)
1.0E+00
1.0E01
1.0E02
1.0E03
1.0E04
0.0001
0.001
0.01
1.0
10
100
1000
50%
20%
10%
5.0%
2.0%
1.0%
R
tjl(t)
= R
tjl*r(t)
R
T
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