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參數(shù)資料
| 型號(hào)： | MBT3946DW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors |
| 中文描述： | 雙通用晶體管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 422K |
| 代理商： | MBT3946DW1T1 |
LESHAN RADIO COMPANY, LTD.
MBT3904–1/12
1
3
2
Dual General Purpose Transistors
MAXIMUM RATINGS
Rating
Symbol
Voltage
Unit
Collector–Emitter Voltage
V
CEO
V
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Collector–Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Emitter–Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Collector Current
-
Continuous
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Electrostatic Discharge
40
–40
V
CBO
V
60
–40
V
EBO
V
6.0
–5.0
I
C
mAdc
200
–200
ESD
HBM>16000,
MM>2000
V
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation(1)
T
A
= 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
Symbol
P
D
Max
150
Unit
mW
R
θ
JA
833
°C/W
T
J
, T
stg
–55 to +150
°C
See Table
6
4
5
SOT–363/SC–88
CASE 419B STYLE 1
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
MBT3904DW1T1
MBT3906DW1T1
1
3
2
6
4
5
Q
1
Q
2
1
3
2
6
4
5
Q
1
Q
2
MBT3946DW1T1
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these devices
are ideal for low–power surface mount applications where board space is at a premium.
h
FE
, 100–300
Low V
CE(sat)
,
3
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
1
3
2
6
4
5
Q
1
Q
2
*Q
1
same as MBT3906DW1T1
Q
2
same as MBT3904DW1T1
ORDERING INFORMATION
Device
Package
MBT3904DW1T1
SOT–363
MBT3906DW1T1
SOT–363
MBT3946DW1T1
SOT–363
Shipping
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBT3946DW1T1 | Dual General Purpose Transistor |
| MBT3946DW1T1G | Dual General Purpose Transistor |
| MBT3946DW1T2 | Dual General Purpose Transistor |
| MBT3946DW1T2G | Dual General Purpose Transistor |
| MC-4216LFC721 | 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的動(dòng)態(tài)RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBT3946DW1T1G | 功能描述:兩極晶體管 - BJT 200mA 40V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3946DW1T1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MBT3946DW1T2 | 功能描述:兩極晶體管 - BJT 200mA 40V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3946DW1T2G | 功能描述:兩極晶體管 - BJT 200mA 40V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT42N | 制造商:APEM 功能描述:Switch Slide 4PDT Extended Top Slide 0.3A 125VAC 30VDC PC Pins Bracket Mount/Through Hole |
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