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| 型號： | MC-4516CD64ES-A10B |
| 廠商： | NEC Corp. |
| 英文描述： | 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| 中文描述： | 16米字，64位同步動態(tài)隨機存儲器模塊以便內(nèi)存 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大小： | 130K |
| 代理商： | MC-4516CD64ES-A10B |
Data Sheet M13612EJ5V0DS00
8
MC-4516CD64ES, 4516CD64PS
Synchronous Characteristics
Parameter
Symbol
-A10B
Unit
Note
MIN.
MAX.
Clock cycle time
/CAS latency = 3
t
CK3
10
(100
MHz)
ns
/CAS latency = 2
t
CK2
15
(67
MHz)
ns
Access time from CLK
/CAS latency = 3
t
AC3
7
ns
1
/CAS latency = 2
t
AC2
8
ns
1
CLK high level width
t
CH
3.5
ns
CLK low level width
t
CL
3.5
ns
Data-out hold time
t
OH
3
ns
1
Data-out low-impedance time
t
LZ
0
ns
Data-out high-impedance time
/CAS latency = 3
t
HZ3
3
7
ns
/CAS latency = 2
t
HZ2
3
8
ns
Data-in setup time
t
DS
2.5
ns
Data-in hold time
t
DH
1
ns
Address setup time
t
AS
2.5
ns
Address hold time
t
AH
1
ns
CKE setup time
t
CKS
2.5
ns
CKE hold time
t
CKH
1
ns
CKE setup time (Power down exit)
t
CKSP
2.5
ns
Command (/CS0, /CS1, /RAS, /CAS, /WE,
DQMB0 - DQMB7) setup time
t
CMS
2.5
ns
Command (/CS0, /CS1, /RAS, /CAS, /WE,
DQMB0 - DQMB7) hold time
t
CMH
1
ns
Note 1.
Output load
Output
Z = 50
50 pF
Remark
These specifications are applied to the monolithic device.
#
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