- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383555 > MC-4532DA727XFA (Elpida Memory, Inc.) 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE PDF資料下載
參數(shù)資料
| 型號(hào)： | MC-4532DA727XFA |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| 中文描述： | 32的M - Word的72位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊注冊(cè)的類型 |
| 文件頁(yè)數(shù)： | 6/14頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | MC-4532DA727XFA |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)當(dāng)前第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
Data Sheet E0279N10 (Ver. 1.0)
6
MC-4532DA727XFA
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
Parameter
Symbol
Test condition
Grade MIN.
MAX.
Unit Notes
Operating current
I
CC1
Burst length = 1
/CAS latency
= 2 -A75
2,200
mA
1
t
RC
≥
t
RC (MIN.)
, I
O
= 0
mA
/CAS latency
= 3 -A75
2,290
Precharge standby current in
I
CC2
P
CKE
≤
V
IL (MAX.)
, t
CK
= 15
ns
268
mA
power down mode
I
CC2
PS CKE
≤
V
IL (MAX.)
, t
CK
=
∞
98
Precharge standby current in
I
CC2
N
CKE
≥
V
IH (MIN.)
, t
CK
= 15
ns, /CS
≥
V
IH (MIN.)
,
610
mA
non power down mode
Input signals are changed one time during 30
ns.
I
CC2
NS CKE
≥
V
IH (MIN.)
, t
CK
=
∞
, Input signals are stable.
224
Active standby current in
I
CC3
P
CKE
≤
V
IL (MAX.)
, t
CK
= 15
ns
340
mA
power down mode
I
CC3
PS CKE
≤
V
IL (MAX.)
, t
CK
=
∞
152
Active standby current in
I
CC3
N CKE
≥
V
IH (MIN.)
, t
CK
= 15
ns, /CS
≥
V
IH (MIN.)
,
790
mA
non power down mode
Input signals are changed one time during 30
ns.
I
CC3
NS CKE
≥
V
IH (MIN.)
, t
CK
=
∞
, Input signals are stable.
440
Operating current
I
CC4
t
CK
≥
t
CK (MIN.)
, I
O
= 0
mA
/CAS latency = 2 -A75
2,290
mA
2
(Burst mode)
/CAS latency = 3 -A75
2,920
CBR (Auto) Refresh current
I
CC5
t
RC
≥
t
RC (MIN.)
/CAS latency = 2 -A75
4,540
mA
3
/CAS latency = 3 -A75
4,720
Self refresh current
I
CC6
CKE
≤
0.2
V
286
mA
Input leakage current
I
I (L)
V
I
= 0 to 3.6
V,
All other pins not under test = 0 V
–20
+20
μ
A
Output leakage current
I
O (L)
D
OUT
is disabled, V
O
= 0 to 3.6
V
–1.5
+1.5
μ
A
High level output voltage
V
OH
I
O
= –4.0
mA
2.4
V
Low level output voltage
V
OL
I
O
= +4.0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
2
. I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK (MIN.)
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-4532DC726 | 32M-Word By72-BIT Dynamic RAM Module(32M×72位動(dòng)態(tài)RAM模塊) |
| MC-454AA725 | 4M-Word By 72-BIT Dynamic RAM Module(4M×72位動(dòng)態(tài)RAM模塊) |
| MC-454AC725 | 4M-Word By 72-BIT Dynamic RAM Module(4M×72位動(dòng)態(tài)RAM模塊) |
| MC-454AC726 | 4M-Word By 72-BIT Dynamic RAM Module(4M×72位動(dòng)態(tài)RAM模塊) |
| MC-454AD644-A67 | 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4532DA727XF-A75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC-4532DA727XFA-A75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE |
| MC454 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EXPANDABLE 3-WIDE 3-INPUT AND-OR-INVERT GATE |
| MC-454AC724 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-454AC724F-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。