- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383555 > MC-458CA721ESA (NEC Corp.) 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM PDF資料下載
參數(shù)資料
| 型號： | MC-458CA721ESA |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| 中文描述： | 800萬字的72位同步動態(tài)隨機存儲器模塊以便內(nèi)存 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 142K |
| 代理商： | MC-458CA721ESA |
Data Sheet M14494EJ2V0DS00
6
MC-458CA721ESA, 458CA721PSA
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
Parameter
Symbol
Test condition
MIN.
MAX.
Unit
Notes
Operating current
I
CC1
Burst length
=
1, t
RC
≥
t
RC(MIN.)
/CAS latency = 2
-A80
550
mA
1
-A10
/CAS latency = 3
-A80
550
-A10
Precharge standby current in
I
CC2
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
5
mA
power down mode
I
CC2
PS
CKE
≤
V
IL(MAX.)
, t
CK
=
∞
5
Precharge standby current in
non power down mode
I
CC2
N
CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
100
mA
I
CC2
NS
CKE
≥
V
IH(MIN.)
, t
CK
=
∞
, Input signals are stable.
40
Active standby current in
I
CC3
P
CKE
≤
V
IL(MAX.)
, t
CK
=
15
ns
25
mA
power down mode
I
CC3
PS
CKE
≤
V
IL(MAX.)
, t
CK
=
∞
20
Active standby current in
non power down mode
I
CC3
N
CKE
≥
V
IH(MIN.)
, t
CK
=
15
ns, /CS
≥
V
IH(MIN.)
,
Input signals are changed one time during 30
ns.
150
mA
I
CC3
NS
CKE
≥
V
IH(MIN.)
, t
CK
=
∞
, Input signals are stable.
100
Operating current
I
CC4
t
CK
≥
t
CK(MIN.)
, I
O
= 0
mA
/CAS latency = 2
-A80
725
mA
2
(Burst mode)
-A10
550
/CAS latency = 3
-A80
875
-A10
700
CBR (Auto) refresh current
I
CC5
t
RC
≥
t
RC(MIN.)
/CAS latency = 2
-A80
1,150
mA
3
-A10
/CAS latency = 3
-A80
1,150
-A10
Self refresh current
I
CC6
CKE
≤
0.2
V
10
mA
Input leakage current
I
I(L)
V
I
=
0 to 3.6
V,
All other pins not under test =
0 V
–
5
+5
μ
A
Output leakage current
I
O(L)
D
OUT
is disabled, V
O
=
0 to 3.6
V
–1.5
+1.5
μ
A
High level output voltage
V
OH
I
O
=
–
4.0
mA
2.4
V
Low level output voltage
V
OL
I
O
=
+
4.0
mA
0.4
V
Notes 1.
I
CC1
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC1
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
2.
I
CC4
depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, I
CC4
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
3.
I
CC5
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
#
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-458CA721PSA | 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-458CA725 | 8M-Word By 72-BIT Dynamic RAM Module(8M×72位動態(tài)RAM模塊) |
| MC-458CA726 | TFT Color LCD Module(TFT彩色液晶顯示器模塊) |
| MC-458CB641ES-A10 | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-458CB641ES-A80 | 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-458CA721ESA-A10 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) |
| MC-458CA721ESA-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-458CA721PSA | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-458CA721PSA-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-458CA721PSA-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復。