參數(shù)資料
型號(hào): MC-4R512FKK8K
廠商: Elpida Memory, Inc.
英文描述: 512MB 32-bit Direct Rambus DRAM RIMM Module
中文描述: 512MB的32位直接Rambus的內(nèi)存RIMM的模塊
文件頁數(shù): 2/13頁
文件大?。?/td> 91K
代理商: MC-4R512FKK8K
MC-4R512FKK8K
Preliminary Data Sheet E0254N10 (Ver. 1.0)
10
RIMM Module Current Profile
IDD
RIMM module power conditions
Note1
MAX.
Unit
IDD1
One RDRAM device per channel in Read
Note2,
balance in NAP mode
1469
mA
IDD2
One RDRAM device per channel in Read
Note2,
balance in Standby mode
2670
mA
IDD3
One RDRAM device per channel in Read
Note2,
balance in Active mode
3300
mA
IDD4
One RDRAM device per channel in Write,
balance in NAP mode
1589
mA
IDD5
One RDRAM device per channel in Write,
balance in Standby mode
2790
mA
IDD6
One RDRAM device per channel in Write,
balance in Active mode
3420
mA
Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage
patterns. Please refer to specific RIMM module vendor data sheets for additional information. Power does
not include Refresh Current. Max current computed for x16 256Mb RDRAM components. x18 288Mb
RDRAM components use 8 mA more current per RDRAM device in Read and 60mA more current per
RDRAM device in Write.
2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257mA or
290mA for x18 ECC module for the following : VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL =
VREF
0.5V.
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