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參數資料
| 型號： | MC-4R64FKE8S-840 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Direct Rambus DRAM SO-RIMM Module |
| 中文描述： | 32M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA160 |
| 封裝： | SORIMM-160 |
| 文件頁數： | 11/14頁 |
| 文件大?。?/td> | 151K |
| 代理商： | MC-4R64FKE8S-840 |
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Data Sheet E0259N21 (Ver. 2.1)
6
MC-4R64FKE8S-840
(2/2)
Signal
I/O
Type
Description
RSCK
I
VCMOS
Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
SA0
I
SVDD
Serial Presence Detect Address 0.
SA1
I
SVDD
Serial Presence Detect Address 1.
SCL
I
SVDD
Serial Presence Detect Clock.
SDA
I/O
SVDD
Serial Presence Detect Data (Open Collector I/O).
SIN
I/O
VCMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
SOUT
I/O
VCMOS
Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
SVDD
—
SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
SWP
I
SVDD
Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
VCMOS
—
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
VDD
—
Supply voltage for the RDRAM core and interface logic.
VREF
—
Logic threshold reference voltage for RSL signals.
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相關代理商/技術參數 |
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| MC-4R64FKE8S-845 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module |
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| MC-4R96CEE6B-845 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT |
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