- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299471 > MC-4R64FKE8S (Elpida Memory, Inc.) Direct Rambus DRAM SO-RIMM Module PDF資料下載
參數(shù)資料
| 型號(hào)： | MC-4R64FKE8S |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | Direct Rambus DRAM SO-RIMM Module |
| 中文描述： | 直接Rambus公司的DRAM的SO - RIMM的模塊 |
| 文件頁(yè)數(shù)： | 14/14頁(yè) |
| 文件大小： | 124K |
| 代理商： | MC-4R64FKE8S |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)當(dāng)前第14頁(yè)
Data Sheet E0140N30 (Ver. 3.0)
9
MC-4R64FKE8S
AC Electrical Specifications
Symbol
Parameter and Conditions
MIN.
TYP.
MAX.
Unit
Z
Module Impedance of RSL signals
25.2
28.0
30.8
Module Impedance of SCK and CMD signals
23.8
28.0
32.2
TPD
Average clock delay from finger to finger of all RSL clock nets
1.06
ns
(CTM, CTMN,CFM, and CFMN)
TPD
Propagation delay variation of RSL signals with respect to TPD
Note1,2
-21
+21
ps
TPD-CMOS
Propagation delay variation of SCK signal with respect to an average clock
delay
Note1
-250
+250
ps
TPD- SCK,CMD Propagation delay variation of CMD signal with respect to SCK signal
-200
+200
ps
Vα/VIN
Attenuation Limit
-845
12.0
%
VXF/VIN
Forward crosstalk coefficient
-845
2.0
%
VXB/VIN
Backward crosstalk coefficient
-845
1.5
%
RDC
DC Resistance Limit
-845
0.9
Notes 1. TPD or Average clock delay is defined as the average delay from finger to finger of all RSL clock nets (CTM,
CTMN, CFM, and CFMN).
2. If the SO-RIMM module meets the following specification, then it is compliant to the specification.
If the SO-RIMM module does not meet these specifications, then the specification can be adjusted by the
“Adjusted
TPD Specification” table.
Adjusted
TPD Specification
Symbol
Parameter and conditions
Adjusted MIN./MAX.
Absolute
Unit
MIN.
MAX.
TPD
Propagation delay variation of RSL signals with respect to TPD
+/
[17+(18*N*Z0)] Note
-30
+30
ps
Note N = Number of RDRAM devices installed on the SO-RIMM module.
Z0 = delta Z0% = (MAX. Z0 MIN. Z0) / (MIN. Z0)
(MAX. Z0 and MIN. Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers
on the module.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-601R | 30 MHz - 700 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9.5 dB CONVERSION LOSS-MAX |
| MC10102FNR2 | 10K SERIES, QUAD 2-INPUT NOR GATE, PQCC20 |
| MC10105FNR2 | 10K SERIES, TRIPLE 3-INPUT OR/NOR GATE, PQCC20 |
| MC10H171P | Dual Binary 1-4 Decoder (Low); Package: PDIP-16; No of Pins: 16; Container: Rail; Qty per Container: 25 |
| MC10H172L | Dual Binary 1-4-Decoder (High); Package: Ceramic DIP 16-Lead; No of Pins: 16; Container: Rail; Qty per Container: 25 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC-4R64FKE8S-840 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module |
| MC-4R64FKE8S-845 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Direct Rambus DRAM SO-RIMM Module |
| MC-4R96CEE6B | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT |
| MC-4R96CEE6B-653 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT |
| MC-4R96CEE6B-745 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。