參數(shù)資料
型號： MC100EP01
廠商： ON SEMICONDUCTOR
英文描述： 3.3V / 5V ECL 4-Input OR/NOR(3.3V / 5V ECL 4輸入或/或非門)
中文描述： 3.3 / 5V的ECL 4輸入或/或非電壓（3.3V / 5V的ECL 4輸入或/或非門）
文件頁數(shù)： 5/10頁
文件大?。?/td> 155K
代理商： MC100EP01
MC10EP01, MC100EP01
http://onsemi.com
5
Table 8. 100EP DC CHARACTERISTICS, PECL
V
CC
= 3.3 V, V
EE
= 0 V (Note 8)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
I
EE
Power Supply Current
15
24
32
17
26
36
19
28
38
mA
V
OH
Output HIGH Voltage (Note 9)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
V
OL
Output LOW Voltage (Note 9)
1355
1480
1605
1355
1480
1605
1355
1480
1605
mV
V
IH
Input HIGH Voltage (Single
Ended)
2075
2420
2075
2420
2075
2420
mV
V
IL
Input LOW Voltage (Single
Ended)
1355
1675
1355
1675
1355
1675
mV
I
IH
Input HIGH Current
150
150
150
A
I
IL
Input LOW Current
0.5
0.5
0.5
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
8. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +0.3 V to
2.2 V.
9. All loading with 50 to V
CC
2.0 V.
Table 9. 100EP DC CHARACTERISTICS, PECL
V
CC
= 5.0 V, V
EE
= 0 V (Note 10)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
I
EE
Power Supply Current
15
24
32
17
26
36
19
28
38
mA
V
OH
Output HIGH Voltage (Note 11)
3855
3980
4105
3855
3980
4105
3855
3980
4105
mV
V
OL
Output LOW Voltage (Note 11)
3055
3180
3305
3055
3180
3305
3055
3180
3305
mV
V
IH
Input HIGH Voltage (Single
Ended)
3775
4120
3775
4120
3775
4120
mV
V
IL
Input LOW Voltage (Single
Ended)
3055
3375
3055
3375
3055
3375
mV
I
IH
Input HIGH Current
150
150
150
A
I
IL
Input LOW Current
0.5
0.5
0.5
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
10.Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +2.0 V to
0.5 V.
11.All loading with 50 to V
CC
2.0 V.
Table 10. 100EP DC CHARACTERISTICS, NECL
V
CC
= 0 V; V
EE
=
5.5 V to
3.0 V (Note 12)
Symbol
Characteristic
40
°
C
25
°
C
85
°
C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
I
EE
Power Supply Current
15
24
32
17
26
36
19
28
38
mA
V
OH
Output HIGH Voltage (Note 13)
1145
1020
895
1145
1020
895
1145
1020
895
mV
V
OL
Output LOW Voltage (Note 13)
1945
1820
1695
1945
1820
1695
1945
1820
1695
mV
V
IH
Input HIGH Voltage (Single
Ended)
1225
880
1225
880
1225
880
mV
V
IL
Input LOW Voltage (Single
Ended)
1945
1625
1945
1625
1945
1625
mV
I
IH
Input HIGH Current
150
150
150
A
I
IL
Input LOW Current
0.5
0.5
0.5
A
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
12.Input and output parameters vary 1:1 with V
CC
.
13.All loading with 50 to V
CC
2.0 V.
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