Table 3. DC CHARACTERISTICS (IVT = OVT = 5.0 V ± 5%; V
參數(shù)資料
型號(hào): MC100H643FNR2G
廠商: ON Semiconductor
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 0K
描述: IC CLK BUFFER 1:8 80MHZ 28-PLCC
標(biāo)準(zhǔn)包裝: 1
類型: 扇出緩沖器(分配)
電路數(shù): 1
比率 - 輸入:輸出: 1:8
差分 - 輸入:輸出: 是/無(wú)
輸入: ECL,TTL
輸出: TTL
頻率 - 最大: 80MHz
電源電壓: 4.75 V ~ 5.25 V,-4.2 V ~ -5.5 V
工作溫度: 0°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 28-LCC(J 形引線)
供應(yīng)商設(shè)備封裝: 28-PLCC(11.51x11.51)
包裝: 剪切帶 (CT)
其它名稱: MC100H643FNR2GOSCT
MC10H643, MC100H643
http://onsemi.com
3
Table 3. DC CHARACTERISTICS (IVT = OVT = 5.0 V ± 5%; VEE = 5.2 V ± 5% (10H Version);
VEE = 4.2 V to 5.5 V (100H Version))
Symbol
Characteristic
Condition
0°C
25°C
85°C
Unit
Min
Max
Min
Max
Min
Max
IEE
Power Supply Current
ECL
VEE Pins
42
42
42
mA
ICCL
TTL
Total all OVT
and IVT pins
106
106
106
mA
ICCH
95
95
95
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 4. 10H ECL DC CHARACTERISTICS (IVT = OVT = 5.0 V ± 5%; VEE = 5.2 V ± 5% (10H Version))
Symbol
Characteristic
0°C
25°C
85°C
Unit
Min
Max
Min
Max
Min
Max
IINH
IINL
Input HIGH Current
Input LOW Current
0.5
255
0.5
175
0.5
175
mA
VIH
VIL
Input HIGH Voltage
Input LOW Voltage
1170
1950
840
1480
1130
1950
810
1480
1070
1950
735
1450
mV
VBB
Output Reference Voltage
1380
1270
1350
1250
1310
1190
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 5. 100H ECL DC CHARACTERISTICS (IVT = OVT = 5.0 V ± 5%; VEE = 4.2 V to 5.5 V (100H))
Symbol
Characteristic
0°C
25°C
85°C
Unit
Min
Max
Min
Max
Min
Max
IINH
IINL
Input HIGH Current
Input LOW Current
0.5
255
0.5
175
0.5
175
mA
VIH
VIL
Input HIGH Voltage
Input LOW Voltage
1165
1810
880
1475
1165
1810
880
1475
1165
1810
880
1475
mV
VBB
Output Reference Voltage
1380
1260
1380
1260
1380
1260
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 6. DC TTL CHARACTERISTICS (IVT = OVT = 5.0 V ± 5%; VEE = 5.2 V ± 5% (10H Version);
VEE = 4.2 V to 5.5 V (100H Version))
Symbol
Characteristic
Condition
0°C
25°C
85°C
Unit
Min
Max
Min
Max
Min
Max
VOH
Output HIGH Voltage
IOH = 3.0 mA
IOH = 15 mA
2.5
2.0
2.5
2.0
2.5
2.0
V
VOL
Output LOW Voltage
IOH = 48 mA
0.5
0.5
0.5
V
IOS
Output Short Circuit Current
VOUT = 0 V
100
225
100
225
100
225
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
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