參數(shù)資料
型號(hào): MC33285
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: Dual High Side TMOS Driver(雙高端TMOS驅(qū)動(dòng)器)
中文描述: 雙高邊坡的TMOS驅(qū)動(dòng)器(雙高端的TMOS驅(qū)動(dòng)器)
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 248K
代理商: MC33285
MC33285
2
MC33285
MAXIMUM RATING
THERMAL RATINGS
ELECTRICAL CHARACTERISTICS
.
(T
A
from -40
°
C to +125
°
C, Vcc from 7V to 20V, unless otherwise noted)
SRC PIN 1
DRN PIN 3
OUT1 PIN2, OUT 2 PIN 4
VCC PIN 6
IN PIN 8
Rating
Symbol
Value
Unit
Maximum voltage at pins OUT1 OUT2
V
OUT
V
CP
V
DRN
V
SRC
V
CC
V
IN
V
VCC
V
VCC
+ 20
50
V
Maximum voltage at pin CP
V
Input voltage V
i
at DRN
Input voltage V
i
at SRC
Input voltage at pin V
CC
Input Voltage at pin IN. Condition : -2V<V
VCC
<40V
Operational voltage V
VCC
at pin V
CC
-2 ; 40
V
-5 ; 40
V
-2 to 40
V
-2 to V
VCC
7 to V
i
V
V
Rating
Symbol
Value
Unit
Storage Temperature
T
stg
T
a
-40 to +150
°
C
°
C
Operating ambient temperature
-40 to +125
Characteristic
Symbol
Min
Typ
Max
Unit
OVERVOLTAGE AND OVERCURRENT
Load Dump Detection Time
tLD
det
250
400
550
μ
s
Load Dump Activation Time
tOUT2act
300
460
620
ms
Error Voltage Threshold
VDRN - VSRC
1.12
1.44
V
Overcurrent Detection Time
tOCdet
520
800
1080
μ
s
Leakage Current
ILC
det
15
30
50
mA
Leakage Current Detection Time
tLC
det
130
200
270
μ
s
Operating Current (7V<V
DRN
<20V)
I
DRN
1.5
mA
Leakage current (0V<V
DRN
<20V, V
VCC
<4V)
I
leak_DRN
-5
5
μ
A
Output On Voltage. Charge Pump ON
Von
Vcc+15
V
Turn off current, Vout >0.5V
Ioutoff
66
110
154
μ
A
Turn On Time, OUT1: 8nF,10
μΑ ;
OUT2:
16nF,10
μΑ
- 7V < Vcc < 10V, Vout > Vcc+7
- 10V < Vcc < 20V, Vout > Vcc+11
ton
1.5
1.5
ms
Supply Voltage Range
Vcc
7
40
V
Quiescent Supply Current at Vcc = 20V
Icc
10
mA
Input Low Voltage OUT1
Vil
0.7
V
Input High Voltage OUT1
Vih
1.7
V
Input Hysteresis OUT1, OUT2
Vhys
0.4
V
Input Pull Down Current, 0.7V<Vin<6V
Iin
7.5
15
16.5
μ
A
Open Input Voltage
Viop
0.7
V
Input Low Voltage OUT2
Vil2
3
V
Input High Voltage OUT2
Vih2
3.9
V
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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