參數(shù)資料
型號(hào): MC33368D
廠商: MOTOROLA INC
元件分類: 穩(wěn)壓器
英文描述: HIGH VOLTAGE GREENLINEE POWER FACTOR CONTROLLER
中文描述: 1.5 A POWER FACTOR CONTROLLER, PDSO16
封裝: SOIC-16
文件頁數(shù): 9/16頁
文件大?。?/td> 417K
代理商: MC33368D
MC33368
9
MOTOROLA ANALOG IC DEVICE DATA
Output Switching Frequency Clamp
In normal operation, the MC33368 operates the boost
inductor in the critical mode. That is, the inductor current
ramps to a peak value, ramps down to zero, then immediately
begins ramping positive again. The peak current is
programmed by the multiplier output within the IC. As the
input voltage haversine declines to near zero, the output
switch on–time becomes constant, rather than going to zero
because of the small integrated dc voltage at Pin 5 caused by
C2, R3 and R5. Because of this, the average line current
does not exactly follow the line voltage near the zero
crossings. The Output Switching Frequency Clamp remedies
this situation to improve power factor and minimize EMI
generated in this operating region. The values of R10 and
C7, as shown in Figure 15, program a minimum off–time in
the frequency clamp which overrides the zero current detect
signal, forcing a minimum off–time. This allows discontinuous
conduction operation of the boost inductor in the zero
crossing region, and the average line current more nearly
follows the voltage. The Output Switching Frequency Clamp
function can be disabled by connecting the FC input, Pin 13,
to the VCC supply Pin 12.
For best results, the minimum off–time, determined by
the values of R10 and C7, should be chosen so that
ts(min) = t(on) + t(off)fc. Output drive is inhibited when the
voltage at the frequency clamp input is less than 2.0 V. When
the output drive is high, C7 is discharged through an internal
100
μ
A current source. When the output drive switches low,
C7 is charged through R10. The drive output is inhibited until
the voltage across C7 reaches 2.0 V, establishing a minimim
off–time where:
t(off)fc
R10 C7 loge
1
2
VCC
Output
The IC contains a CMOS output driver that was
specifically designed for direct drive of power MOSFETs. The
Gate Output is capable of up to
±
1500 mA peak current with
a typical rise and fall time of 50 ns with a 1.0 nF load.
Additional internal circuitry has been added to keep the Gate
Output in a sinking mode whenever the Undervoltage
Lockout is active. This characteristic eliminates the need for
an external gate pull–down resistor. The totem–pole output
has been optimized to minimize cross–conduction current
during high speed operation.
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