參數(shù)資料
型號(hào): MC33503SNT1G
廠商: ON Semiconductor
文件頁(yè)數(shù): 7/14頁(yè)
文件大?。?/td> 0K
描述: IC OPAMP SINGLE R-R 1V 5TSOP
產(chǎn)品變化通告: Product Obsolescence 29/Oct/2010
標(biāo)準(zhǔn)包裝: 1
系列: SMARTMOS™
放大器類型: 通用
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 3 V/µs
增益帶寬積: 4MHz
電流 - 輸入偏壓: 0.04pA
電壓 - 輸入偏移: 500µV
電流 - 電源: 1.65mA
電流 - 輸出 / 通道: 70mA
電壓 - 電源,單路/雙路(±): 1 V ~ 7 V,±0.5 V ~ 3.5 V
工作溫度: -40°C ~ 105°C
安裝類型: 表面貼裝
封裝/外殼: 6-TSOP(0.059",1.50mm 寬)5 引線
供應(yīng)商設(shè)備封裝: 5-TSOP
包裝: 剪切帶 (CT)
其它名稱: MC33503SNT1GOSCT
MC33501, MC33503
http://onsemi.com
2
Figure 1. Simplified Block Diagram
This device contains 98 active transistors per amplifier.
Inputs
Input
Stage
Outputs
Buffer with 0 V
Level Shift
Saturation
Detector
Offset
Voltage
Trim
Base
Current
Boost
Base
Current
Boost
Output
Stage
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (VCC to VEE)
VS
7.0
V
ESD Protection Voltage at any Pin
Human Body Model
VESD
2000
V
Voltage at Any Device Pin
VDP
VS ±0.3
V
Input Differential Voltage Range
VIDR
VCC to VEE
V
Common Mode Input Voltage Range
VCM
VCC to VEE
V
Output Short Circuit Duration
tS
Note 1
s
Maximum Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
65 to 150
°C
Maximum Power Dissipation
PD
Note 1
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
2. ESD data available upon request.
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