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參數(shù)資料
| 型號(hào)： | MC33797 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | Four Channel Squib Driver IC |
| 中文描述： | 四通道爆管驅(qū)動(dòng)IC |
| 文件頁(yè)數(shù)： | 5/32頁(yè) |
| 文件大小： | 639K |
| 代理商： | MC33797 |
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Analog Integrated Circuit Device Data
Freescale Semiconductor
13
33797
DYNAMIC ELECTRICAL CHARACTERISTICS
FET DRIVERS
Turn-On Delay Time
CS
↑ to 80% IHS
tON
––
72
s
Turn-Off Delay Time
CS
↑ to 20% IHS
tOFF
––
10
s
Diagnostic Timing/Resolution
5.0 V
≤ VVDIAG_X ≤ 35 V, IHS ≥ IMEAS, 0 s ≤ tMEASURE_TIME ≤ 6.375 ms,
CSQUIB_HI = 0.12 F, CSQUIB_LO = 0.12 F
tRESOLUTION
21.25
25
28.75
s
DIAGNOSTIC DELAY TIME
Squib Resistance Diagnostic Delay Time (21)
From CSB
↑ Until Transistor Test Results Are Valid, CSQUIB_HI = 0.12 F,
CSQUIB_LO = 0.12 F
tDIAG1
––
300
s
Squib Open/Short Diagnostic Delay Time (21)
From CSB
↑ Until Squib Open/Short Diagnostic Results Are Valid,
CSQUIB_HI = 0.12 F, CSQUIB_LO = 0.12 F
tDIAG2
–
3000
s
VDIAG Supply Diagnostic Delay Time From CSB
↑ until VDIAG Diagnostic
Results Are Valid (21)
tDIAG4
–
3000
s
VFIRE Supply Diagnostic Delay Time
15 V
≤ VVDIAG_X ≤ 35 V, From CSB ↑ Until High-Side Safing Sensor
Diagnostic Results Are Valid, CVDIAG < 0.015 F
tDIAG6
–
1000
s
High-Side Safing Sensor Diagnostic Delay Time (21)
15 V
≤ VVDIAG_X ≤ 35 V, From CSB ↑ Until High-Side Safing Sensor
Diagnostic Results Are Valid, CVDIAG < 0.015 F
tDIAG7
–
1000
s
FET Drivers High- and Low-Side Driver Transistor Diagnostic Delay Time (21)
15 V
≤ VVDIAG_X ≤ 35 V, From CSB ↑ Until Transistor Test Results Are
Valid, CSQUIB_HI = 0.12 F, CSQUIB_LO = 0.12 F, CVDIAG < 0.015 F
tDIAG9
–
1000
s
VFIRE_RTN Diagnostic Delay Time (21)
From CSB
↑ Until VFIRE_RTN Diagnostic Results Are Valid
tDIAG10
––
300
s
Squib Continuity Diagnostic Delay Time (21)
From CSB
↑ Until VTHSQBCON Diagnostic Results Are Valid
tDIAG11
–
3000
s
Squib Short Between Firing Loops Diagnostic Delay Time From CSB
↑ Until
VTHSSQB Diagnostic Results Are Valid
tDIAG12
–
3000
s
FEN INPUT TERMINAL
Minimum Pulse Width
FENFILTER
12
14
16
s
Notes
21.
Guaranteed by Characterization
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V ≤ VDD ≤ 5.25 V; 7.0 V ≤ VVFIRE_XX ≤ 35 V; VVDIAG_X = VVFIRE_XX; FEN 1 = FEN 2
= VDD; RR_LIMIT_X =10k ±1%, RR_DIAG = 10 k ±1%, -40°C ≤ TA ≤ +85°C, GND = 0 unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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| MC33797BPEWR2 | 功能描述:功率驅(qū)動(dòng)器IC Four Channel Squib Dr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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