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參數(shù)資料
| 型號： | MC34271FB |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Internal power supply connectors (C-UL, TUV), Discrete wire connectors; HRS No: 680-1089-7 00; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -35 to 85; General Description: Female contact |
| 中文描述： | 0.5 A DUAL SWITCHING CONTROLLER, 140 kHz SWITCHING FREQ-MAX, PQFP32 |
| 封裝： | PLASTIC, LQFP-32 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 343K |
| 代理商： | MC34271FB |
MC34271
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(VDD = 6.0 V, for typical values TA = Low to High [Note 1], for min/max values TA is
the operating ambient temperature range that applies, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
REFERENCE SECTION
Reference Voltage (TJ = 25
°
C)
Line Regulation (VDD = 5.0 V to 12.5 V)
Load Regulation (IO = 0 to 120
μ
A)
Total Variation (Line, Load and Temperature)
Vref
Regline
Regload
Vref
1.225
1.250
1.275
V
–
2.0
10
mV
–
2.0
10
mV
1.215
–
1.285
V
ERROR AMPLIFIERS
Input Offset Voltage (VCM = 1.25 V)
Input Bias Current (VCM = 1.25 V)
Open Loop Voltage Gain (VCM = 1.25 V, VCOMP = 2.0 V)
Output Voltage Swing
High State (IOH = –100
μ
A)
Low State (IOL = 100
μ
A)
BIAS VOLTAGE
VIO
IIB
AVOL
–
1.0
10
mV
–
120
600
nA
80
100
–
dB
V
VeOH
VeOL
VA–1.5
0
4.0
–
5.5
1.0
Voltage (VDD = 5.0 V to 12.5 V, IO = 0)
VA
4.6
5.0
5.4
V
OSCILLATOR AND PWM SECTIONS
Total Frequency Variation Over Line and Temperature
VDD = 5.0 V to 10 V, TA = 0
°
to 70
°
C, RT = 169 k
Duty Cycle at Each Output
Maximum
Minimum
Sync Inpu
t
Input Resistance (Vsync = 3.5 V)
Minimum Sync Pulse Width
fOSC
kHz
90
115
140
%
DCmax
DCmin
92
–
95
–
–
0
Rsync
Tp
25
–
50
1.0
100
–
k
μ
s
OUTPUT MOSFETs
Output Voltage – “On”–State (Isink = 200 mA)
Output Current – “Off”–State (VOH = 40 V)
Rise and Fall Times
VOL
IOH
tr, tf
–
150
250
mV
–
0.1
1.0
μ
A
–
50
–
ns
EL DISCHARGE OUTPUT (ELD) AND DRV1
Output Voltage – “On”–State (Isink = 100
μ
A)
Output Voltage – “On”–State (Isink = 50 mA)
Output Voltage – “Off”–State (Isource = –100
μ
A)
Output Voltage – “Off”–State (Isource = –50 mA)
VOL
VOL
VOH
VOH
–
30
100
mV
–
2.0
2.5
V
VDD–0.5
VDD–3.5
5.9
–
V
3.3
–
V
FEEDBACK ENABLE SWITCHES (DS1, DS2)
Output Voltage – “Low”–State (Isink = 1.0 mA)
Output Current – “Off”–State (VOH = 12.5 V)
VfeOL
IfeOH
–
10
100
mV
–
0.6
1.0
μ
A
SWITCHED VDD OUTPUT (SW1)
Output Voltage
Switch “On” (EN1 = 1, Isource = 100
μ
A)
Switch “Off” (EN1 = 0, Isink = 100
μ
A)
AUXILIARY VOLTAGE OUTPUTS
V
VswOH
VswOL
5.5
0
5.9
0.1
6.0
0.2
V0 Enable Switch
“On”–Resistance: VB to V0
“Off”–State Leakage Current (VB = 10 V)
V0 Voltage (VB = 30 V, Isource = 0 mA)
V0 Resistance (Isource = 4.0 mA)
Rds
Ilkg
V0
R0
0
0
2.0
0.1
29.9
40
10
2.0
30
60
μ
A
V
29.5
20
NOTE:
1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
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