參數(shù)資料
型號: MC74HC03A
廠商: ON SEMICONDUCTOR
英文描述: Quad 2-Input NAND Gate with Open-Drain Outputs(四2輸入與非門(漏極開路))
中文描述: 四2輸入與非門為開漏輸出(四2輸入與非門(漏極開路))
文件頁數(shù): 3/6頁
文件大?。?/td> 84K
代理商: MC74HC03A
MC74HC03A
http://onsemi.com
3
DC CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
V
Guaranteed Limit
55 to 25
°
C
Symbol
Parameter
Condition
85
°
C
125
°
C
Unit
V
IH
Minimum HighLevel Input Voltage
V
out
= 0.1V or V
CC
0.1V
|I
out
|
20 A
2.0
3.0
4.5
6.0
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
V
V
IL
Maximum LowLevel Input Voltage
V
out
= 0.1V or V
CC
0.1V
|I
out
|
20 A
2.0
3.0
4.5
6.0
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
V
V
OL
Maximum LowLevel Output
Voltage
V
out
= 0.1V or V
CC
0.1V
|I
out
|
20 A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IH
or V
IL
|I
out
|
2.4mA
|I
out
|
4.0mA
|I
out
|
5.2mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
I
in
Maximum Input Leakage Current
V
in
= V
CC
or GND
6.0
±
0.1
±
1.0
±
1.0
A
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0 A
6.0
1.0
10
40
A
I
OZ
Maximum ThreeState Leakage
Current
Output in HighImpedance State
V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
6.0
±
0.5
±
5.0
±
10
A
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
AC CHARACTERISTICS
(C
L
= 50pF, Input t
r
= t
f
= 6ns)
V
CC
V
Guaranteed Limit
Symbol
Parameter
55 to 25
°
C
85
°
C
125
°
C
Unit
t
PLZ
,
t
PZL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
3.0
4.5
6.0
120
45
24
20
150
60
30
26
180
75
36
31
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
27
15
13
95
32
19
16
110
36
22
19
ns
C
in
Maximum Input Capacitance
10
10
10
pF
C
out
Maximum ThreeState Output Capacitance
(Output in HighImpedance State)
10
10
10
pF
NOTE:For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor HighSpeed CMOS Data Book (DL129/D).
Typical @ 25
°
C, V
CC
= 5.0 V, V
EE
= 0 V
C
PD
Power Dissipation Capacitance (Per Buffer)*
* Used to determine the noload dynamic power consumption: P
D
= C
PD
V
CC2
f + I
CC
V
CC
. For load considerations, see Chapter 2 of the
ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
8.0
pF
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