參數(shù)資料
型號(hào): MC74HC1GU04DTT2
廠商: MOTOROLA INC
元件分類: 門電路
英文描述: HC/UH SERIES, 1-INPUT INVERT GATE, PDSO5
封裝: SC-59, SOT-23, TSOP-5
文件頁數(shù): 5/12頁
文件大?。?/td> 218K
代理商: MC74HC1GU04DTT2
http://onsemi.com
2
MAXIMUM RATINGS*
Characteristics
Symbol
Value
Unit
DC Supply Voltage
VCC
–0.5 to +7.0
V
DC Input Voltage
VIN
–0.5 to VCC + 0.5
V
DC Output Voltage
VOUT
–0.5 to VCC + 0.5
V
Input Diode Current
IIK
±20
mA
Output Diode Current
(VOUT < GND; VOUT > VCC)
IOK
±20
mA
DC Output Current, per Pin
IOUT
±12.5
mA
DC Supply Current, VCC and GND
ICC
±25
mA
Power dissipation in still air
SC–88A
TSOP5
PD
200
450
mW
Lead temperature, 1 mm from case for 10 s
TL
260
°C
Storage temperature
Tstg
–65 to +150
°C
* Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
Derating — SC–88A Package: –3 mW/
_C from 65_ to 125_C
— TSOP5 Package: –6 mW/
_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Characteristics
Symbol
Min
Max
Unit
DC Supply Voltage
VCC
2.0
6.0
V
DC Input Voltage
VIN
0.0
VCC
V
DC Output Voltage
VOUT
0.0
VCC
V
Operating Temperature Range
TA
–55
+125
°C
Input Rise and Fall Time
VCC = 2.0V
VCC = 3.0V
VCC = 4.5V
VCC = 6.0V
tr , tf
0
1000
600
500
400
ns
The
qJA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table and
figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
T J
=
90
T J
=
100
T J
=
1
10
T J
=
130
T J
=
120
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time
Junction Temperature
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