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參數(shù)資料
| 型號(hào)： | MC74HC240ANG |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 0K |
| 描述： | IC INVERTER DUAL 4-INPUT 20DIP |
| 標(biāo)準(zhǔn)包裝： | 18 |
| 系列： | 74HC |
| 邏輯類型： | 逆變器，緩沖器 |
| 電路數(shù)： | 2 |
| 輸入數(shù)： | 4 |
| 特點(diǎn)： | 三態(tài) |
| 電源電壓： | 2 V ~ 6 V |
| 電流 - 靜態(tài)（最大值）： | 4µA |
| 輸出電流高，低： | 7.8mA，7.8mA |
| 邏輯電平 - 低： | 0.5 V ~ 1.8 V |
| 邏輯電平 - 高： | 1.5 V ~ 4.2 V |
| 額定電壓和最大 CL 時(shí)的最大傳播延遲： | 14ns @ 6V，50pF |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 通孔 |
| 供應(yīng)商設(shè)備封裝： | 20-PDIP |
| 封裝/外殼： | 20-DIP（0.300"，7.62mm） |
| 包裝： | 散裝 |
| 產(chǎn)品目錄頁面： | 1122 (CN2011-ZH PDF) |
| 其它名稱： | MC74HC240ANGOS |
MC74HC240A
http://onsemi.com
3
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air,
Plastic DIP
SOIC Package
TSSOP Package
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
260
_C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
v 85_C
v 125_C
Unit
VIH
Minimum HighLevel Input Voltage
Vout = VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum LowLevel Input Voltage
Vout = 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
VOH
Minimum HighLevel Output
Voltage
Vin = VIH
|Iout| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH
|Iout| v 2.4 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
VOL
Maximum LowLevel Output
Voltage
Vin = VIL
|Iout| v 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
V
Vin = VIL
|Iout| v 2.4 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
3.0
4.5
6.0
0.26
0.33
0.4
Iin
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
mA
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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