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參數(shù)資料
型號： MC74HC595ADG
廠商： ON Semiconductor
文件頁數(shù)： 6/12頁
文件大?。?/td> 0K
描述： IC SHIFT REGISTER 8BIT 16-SOIC
標(biāo)準(zhǔn)包裝： 48
系列： 74HC
邏輯類型： 移位寄存器
輸出類型： 三態(tài)
元件數(shù)： 1
每個元件的位元數(shù)： 8
功能： 串行至并行
電源電壓： 2 V ~ 6 V
工作溫度： -55°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 16-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 16-SOIC
包裝： 管件
產(chǎn)品目錄頁面： 1123 (CN2011-ZH PDF)
其它名稱： MC74HC595ADG-ND
MC74HC595ADGOS
MC74HC595A
http://onsemi.com
3
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
–0.5 to +7.0
V
Vin
DC Input Voltage (Referenced to GND)
–0.5 to VCC+0.5
V
Vout
DC Output Voltage (Referenced to GND)
–0.5 to VCC+0.5
V
Iin
DC Input Current, per Pin
±20
mA
Iout
DC Output Current, per Pin
±35
mA
ICC
DC Supply Current, VCC and GND Pins
±75
mA
PD
Power Dissipation in Still Air,
Plastic DIP
SOIC Package
TSSOP Package
750
500
450
mW
Tstg
Storage Temperature
–65 to +150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
260
_C
VESD
ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
>3000
>400
N/A
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
1. Tested to EIA/JESD22A114A.
2. Tested to EIA/JESD22A115A.
3. Tested to JESD22C101A.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout DC Input Voltage, Output Voltage
(Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
V
Guaranteed Limit
Unit
– 55 to 25_C
v 85_C
v 125_C
VIH
Minimum HighLevel Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum LowLevel Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
VOH
Minimum HighLevel Output
Voltage, QA QH
Vin = VIH or VIL
|Iout| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL
|Iout| v 2.4 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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