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參數(shù)資料
型號(hào)： MC74HCT241ADTG
廠商： ON Semiconductor
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 0K
描述： BUFFRNONINVRT3-ST/LN DR TSSOP20
標(biāo)準(zhǔn)包裝： 75
系列： 74HCT
邏輯類(lèi)型： 緩沖器/線(xiàn)路驅(qū)動(dòng)器，非反相
元件數(shù)： 2
每個(gè)元件的位元數(shù)： 4
輸出電流高，低： 6mA，6mA
電源電壓： 4.5 V ~ 5.5 V
工作溫度： -55°C ~ 125°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： 20-TSSOP（0.173"，4.40mm 寬）
供應(yīng)商設(shè)備封裝： 20-TSSOP
包裝： 管件
MC74HCT241A
http://onsemi.com
3
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP
SOIC Package
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time (Figure 1)
0
500
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
V
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C
v 125_C
VIH
Minimum HighLevel Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 μA
4.5
5.5
2
V
VIL
Maximum LowLevel Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 μA
4.5
5.5
0.8
0 8
0.8
V
VOH
Minimum HighLevel Output
Voltage
Vin = VIH or VIL
|Iout| v 20 μA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIH or VIL
|Iout| v 6 mA
4.5
3.98
3.84
3.7
VOL
Maximum LowLevel Output
Voltage
Vin = VIH or VIL
|Iout| v 20 μA
4.5
5.5
0.1
V
Vin = VIH or VIL
|Iout| v 6 mA
4.5
0.26
0.33
0.4
Iin
Maximum Input Leakage Current Vin = VCC or GND
5.5
± 0.1
± 1.0
μA
IOZ
Maximum ThreeState
Leakage Current
Output in HighImpedance State
Vin = VIL or VIH
Vout = VCC or GND
5.5
± 0.5
± 5.0
± 10
μA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 μA
5.5
4
40
160
μA
ΔICC
Additional Quiescent Supply
Current
Vin = 2.4 V, Any One Input
Vin = VCC or GND, Other Inputs
lout = 0 μA
5.5
≥ 55_C
25_C to 125_C
mA
2.9
2.4
1. Total Supply Current = ICC + ΣΔICC.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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