參數(shù)資料
型號(hào): MC74HCU04ANG
廠商: ON SEMICONDUCTOR
元件分類(lèi): 通用總線功能
英文描述: Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS
中文描述: HC/UH SERIES, HEX 1-INPUT INVERT GATE, PDIP14
封裝: LEAD FREE, PLASTIC, DIP-14
文件頁(yè)數(shù): 4/9頁(yè)
文件大小: 177K
代理商: MC74HCU04ANG
MC74HCU04A
http://onsemi.com
4
2. For V
CC
= 2.0 V, V
out
= 0.2 V or V
CC
0.2 V.
2.4 mA
4.0 mA
5.2 mA
6.0
Test Conditions
Unit
125 C
85 C
25 C
V
Parameter
Symbol
V
OL
Maximum Low
Level Output
V
in
= V
CC
out
2.0
0.2
0.2
|I
out
|
in
in
CC
3. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High
Speed CMOS Data Book (DL129/D).
4. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High
Speed CMOS Data Book (DL129/D).
Symbol
Guaranteed Limit
125 C
Parameter
V
CC
V
– 55 to
25 C
85 C
Unit
t
PLH
,
Maximum Propagation Delay, Input A to Output Y
2.0
4.5
6.0
70
14
12
90
18
15
105
21
18
ns
t
TLH
,
Maximum Output Transition Time, Any Output
2.0
4.5
75
15
95
19
110
22
ns
in
C
PD
Power Dissipation Capacitance (Per Inverter)*
5. Used to determine the no
load dynamic power consumption: P
D
= C
PD
V
CC2
f + I
CC
V
CC
. For load considerations, see Chapter 2 of the
ON Semiconductor High
Speed CMOS Data Book (DL129/D).
Typical @ 25
°
C, V
CC
= 5.0 V
15
pF
Figure 1. Switching Waveforms
t
r
V
CC
GND
90%
50%
10%
90%
50%
10%
INPUT A
OUTPUT Y
t
PHL
t
PLH
t
THL
t
TLH
*Includes all probe and jig capacitance
Figure 2. Test Circuit
C
L
*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 3. Logic Detail
(1/6 of Device Shown)
t
f
A
V
CC
Y
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