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參數(shù)資料
型號: MC74LVX14DR2
廠商: ON Semiconductor
文件頁數(shù): 3/7頁
文件大?。?/td> 0K
描述: IC INVERTER HEX SCHMITT 14-SOIC
產(chǎn)品變化通告: Product Discontinuation 20/Aug/2008
標(biāo)準(zhǔn)包裝: 2,500
系列: 74LVX
邏輯類型: 逆變器,緩沖器
電路數(shù): 6
輸入數(shù): 1
特點(diǎn): 施密特觸發(fā)器
電源電壓: 2 V ~ 3.6 V
電流 - 靜態(tài)(最大值): 2µA
輸出電流高,低: 4mA,4mA
邏輯電平 - 低: 0.9V
邏輯電平 - 高: 2.2V
額定電壓和最大 CL 時(shí)的最大傳播延遲: 14.1ns @ 3V ~ 3.6V,50pF
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
供應(yīng)商設(shè)備封裝: 14-SOICN
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
包裝: 帶卷 (TR)
MC74LVX14
http://onsemi.com
3
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
–0.5 to +7.0
V
Vin
DC Input Voltage
–0.5 to +7.0
V
Vout
DC Output Voltage
–0.5 to VCC +0.5
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current
±20
mA
Iout
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND Pins
±50
mA
PD
Power Dissipation
180
mW
Tstg
Storage Temperature
–65 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
2.0
3.6
V
Vin
DC Input Voltage
0
5.5
V
Vout
DC Output Voltage
0
VCC
V
TA
Operating Temperature, All Package Types
40
+85
°C
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
V
TA = 25°C
TA = 40 to 85°C
Unit
Min
Typ
Max
Min
Max
VT+
Positive Threshold Voltage (Figure 5)
3.0
2.20
2.20
V
VT
Negative Threshold Voltage (Figure 5)
3.0
0.90
0.90
V
VH
Hysteresis Voltage (Figure 5)
3.0
0.30
1.20
0.30
1.20
V
VOH
HighLevel Output Voltage
(Vin = VIH or VIL)
IOH = 50 mA
IOH = 4 mA
2.0
3.0
1.9
2.9
2.58
2.0
3.0
1.9
2.9
2.48
V
VOL
LowLevel Output Voltage
(Vin = VIH or VIL)
IOL = 50 mA
IOL = 4 mA
2.0
3.0
0.0
0.0
0.1
0.36
0.1
0.44
V
Iin
Input Leakage Current
Vin = 5.5 V or GND
3.6
±0.1
±1.0
mA
ICC
Quiescent Supply Current
Vin = VCC or GND
3.6
2.0
20.0
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
Test Conditions
TA = 25°C
TA = 40 to 85°C
Unit
Min
Typ
Max
Min
Max
tPLH,
tPHL
Propagation Delay, InputtoOutput
VCC = 2.7 V
CL = 15 pF
CL = 50 pF
8.7
11.2
16.3
19.8
1.0
19.5
23.0
ns
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
6.8
9.3
10.6
14.1
1.0
1.0
12.5
16.0
tOSHL
tOSLH
OutputtoOutput Skew (Note 1)
VCC = 2.7 V
CL = 50 pF
VCC = 3.3 ± 0.3 V CL = 50 pF
1.5
1.5
ns
1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGHtoLOW (tOSHL) or LOWtoHIGH (tOSLH); parameter
guaranteed by design.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
TA = 25°C
TA = 40 to 85°C
Unit
Min
Typ
Max
Min
Max
Cin
Input Capacitance
4
10
10
pF
CPD
Power Dissipation Capacitance (Note 2)
21
pF
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC/6 (per buffer). CPD is used to determine the
noload dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
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