After time, t
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉锛� MC908AP32ACFBE
寤犲晢锛� Freescale Semiconductor
鏂囦欢闋佹暩(sh霉)锛� 256/316闋�
鏂囦欢澶�?銆�?/td> 0K
鎻忚堪锛� IC MCU 32K FLASH 8MHZ 44-QFP
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 96
绯诲垪锛� HC08
鏍稿績铏曠悊鍣細 HC08
鑺珨灏哄锛� 8-浣�
閫熷害锛� 8MHz
閫i€氭€э細 I²C锛孖RSCI锛孲CI锛孲PI
澶栧湇瑷�(sh猫)鍌欙細 LED锛孡VD锛孭OR锛孭WM
杓稿叆/杓稿嚭鏁�(sh霉)锛� 32
绋嬪簭瀛樺劜(ch菙)鍣ㄥ閲忥細 32KB锛�32K x 8锛�
绋嬪簭瀛樺劜(ch菙)鍣ㄩ鍨嬶細 闁冨瓨
RAM 瀹归噺锛� 2K x 8
闆诲 - 闆绘簮 (Vcc/Vdd)锛� 4.5 V ~ 5.5 V
鏁�(sh霉)鎿�(j霉)杞�(zhu菐n)鎻涘櫒锛� A/D 8x10b
鎸暕鍣ㄥ瀷锛� 鍏�(n猫i)閮�
宸ヤ綔婧害锛� -40°C ~ 85°C
灏佽/澶栨锛� 44-QFP
鍖呰锛� 鎵樼洡
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Memory
MC68HC908AP A-Family Data Sheet, Rev. 3
44
Freescale Semiconductor
8.
Clear the HVEN bit.
9.
After time, trcv (1 s), the memory can be accessed in read mode again.
NOTE
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
2.5.4 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
1.
Set both the ERASE bit and the MASS bit in the FLASH control register.
2.
Write any data to any FLASH location within the FLASH memory address range.
3.
Wait for a time, tnvs (5 s).
4.
Set the HVEN bit.
5.
Wait for a time tme (200 ms). (See NOTE below.)
6.
Clear the ERASE bit.
7.
Wait for a time, tnvh1 (100 s).
8.
Clear the HVEN bit.
9.
After time, trcv (1 s), the memory can be accessed in read mode again.
NOTE
Due to the relatively long mass erase time, user should take care in the
code to prevent a COP reset from happening while the HVEN bit is set.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
2.5.5 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80 or $XXC0. Use the following procedure to program a row
of FLASH memory. (Figure 2-4 shows a flowchart of the programming algorithm.)
1.
Set the PGM bit. This configures the memory for program operation and enables the latching of
address and data for programming.
2.
Write any data to any FLASH location within the address range of the row to be programmed.
3.
Wait for a time, tnvs (5 s).
4.
Set the HVEN bit.
5.
Wait for a time, tpgs (10 s).
6.
Write data to the FLASH location to be programmed.
7.
Wait for time, tprog (20 s to 40 s).
8.
Repeat steps 6 and 7 until all bytes within the row are programmed.
9.
Clear the PGM bit.
10.
Wait for time, tnvh (5 s).
11.
Clear the HVEN bit.
鐩搁棞(gu膩n)PDF璩囨枡
PDF鎻忚堪
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鐩搁棞(gu膩n)浠g悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉)
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MC908AP32CBE 鍔熻兘鎻忚堪:8浣嶅井鎺у埗鍣� -MCU MCU 32K FLASH 10 BIT ADC RoHS:鍚� 鍒堕€犲晢:Silicon Labs 鏍稿績:8051 铏曠悊鍣ㄧ郴鍒�:C8051F39x 鏁�(sh霉)鎿�(j霉)绺界窔瀵害:8 bit 鏈€澶ф檪(sh铆)閻橀牷鐜�:50 MHz 绋嬪簭瀛樺劜(ch菙)鍣ㄥぇ灏�:16 KB 鏁�(sh霉)鎿�(j霉) RAM 澶у皬:1 KB 鐗囦笂 ADC:Yes 宸ヤ綔闆绘簮闆诲:1.8 V to 3.6 V 宸ヤ綔婧害鑼冨湇:- 40 C to + 105 C 灏佽 / 绠遍珨:QFN-20 瀹夎棰�(f膿ng)鏍�:SMD/SMT
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