參數(shù)資料
型號(hào): MC9RS08KA8CPG
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDIP16
封裝: ROHS COMPLIANT, PLASTIC, DIP-16
文件頁數(shù): 17/42頁
文件大?。?/td> 949K
代理商: MC9RS08KA8CPG
MC9RS08KA8 Series MCU Data Sheet, Rev. 4
Electrical Characteristics
Freescale Semiconductor
24
Figure 22. Example VPP Filtering
Program/Erase voltage
VPP
11.8
12
12.2
V
VPP current
Program
Mass erase
IVPP_prog
IVPP_erase
200
100
μA
Supply voltage for read operation
0 < fBus < 10 MHz
VRead
1.8
5.5
V
Byte program time
tprog
20
40
μs
Mass erase time
tme
500
ms
Cumulative program HV time2
thv
——
8
ms
Total cumulative HV time
(total of tme & thv applied to device)
thv_total
——
2
hours
HVEN to program setup time
tpgs
10
μs
PGM/MASS to HVEN setup time
tnvs
5—
μs
HVEN hold time for PGM
tnvh
5—
μs
HVEN hold time for MASS
tnvh1
100
μs
VPP to PGM/MASS setup time
tvps
20
ns
HVEN to VPP hold time
tvph
20
ns
VPP rise time
3
tvrs
200
ns
Recovery time
trcv
1—
μs
Program/erase endurance
TL to TH = –40
°C to 85°C
1000
cycles
Data retention
t
D_ret
15
years
1 Typicals are measured at 25
°C.
2 t
hv is the cumulative high voltage programming time to the same row before next erase. Same address can not be
programmed more than twice before next erase.
3 Fast V
PP rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad
and cause permanent damage to the pad. External filtering for the VPP power source is recommended. An example VPP
filter is shown in Figure 22.
Table 16. Flash Characteristics (continued)
Characteristic
Symbol
Min
Typical1
Max
Unit
100 Ω
VPP
12 V
1 nF
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