參數(shù)資料
型號: MC9RS08KB4CWJ
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: MICROCONTROLLER, PDSO20
封裝: 1.27 MM PITCH, ROHS COMPLIANT, MS-013AC, SOIC-20
文件頁數(shù): 47/48頁
文件大?。?/td> 847K
代理商: MC9RS08KB4CWJ
MC9RS08KB12 Series MCU Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
8
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA× (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
During the device qualification ESD stresses were performed for the human body model (HBM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Table 5. ESD and Latch-Up Test Conditions
Model
Description
Symbol
Value
Unit
Human
body
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
1
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
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