TJ
參數(shù)資料
型號(hào)： MC9S08LL64CLH
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 7/47頁(yè)
文件大?。?/td> 0K
描述： MCU 8BIT CPU 64K FLASH 64LQFP
產(chǎn)品培訓(xùn)模塊： MC9S08LL64/36 LCD MCU Introduction
標(biāo)準(zhǔn)包裝： 160
系列： S08
核心處理器： S08
芯體尺寸： 8-位
速度： 40MHz
連通性： I²C，SCI，SPI
外圍設(shè)備： LCD，LVD，POR，PWM，WDT
輸入/輸出數(shù)： 37
程序存儲(chǔ)器容量： 64KB（64K x 8）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 4K x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 64-LQFP
包裝： 托盤(pán)
產(chǎn)品目錄頁(yè)面： 727 (CN2011-ZH PDF)
ESD Protection and Latch-Up Immunity
MC9S08LL64 Series MCU Data Sheet, Rev. 7
Freescale Semiconductor
11
TJ = TA + (PD × θJA)
Eqn. 1
where:
TA = Ambient temperature, °C
θJA = Package thermal resistance, junction-to-ambient, °C/W
PD = Pint + PI/O
Pint = IDD × VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification, ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
body model
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
Charge
device
model
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC9S08LL64CLH 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HCS08 40MHZ LQFP-64
MC9S08LL64CLK 功能描述:8位微控制器 -MCU S08 CPU, 64K FLASH 80LQFP RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
MC9S08LL64CLK 制造商:Freescale Semiconductor 功能描述:IC, 16BIT MCU,20 MHz, 80-LQFP
MC9S08LL8 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MC9S08LL16 Series
MC9S08LL8CGT 功能描述:8位微控制器 -MCU 8BIT 8KFLASH 2KRAM RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
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