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參數(shù)資料
| 型號： | MC9S08SE8CWLE |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO28 |
| 封裝： | ROHS COMPLIANT, SOIC-28 |
| 文件頁數(shù)： | 20/38頁 |
| 文件大?。?/td> | 2486K |
| 代理商： | MC9S08SE8CWLE |
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Ordering Information
MC9S08SE8 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor
27
3.11
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory section in the reference
manual.
4
Ordering Information
This chapter contains ordering information for the device numbering system.
Example of the device numbering system:
Table 15. Flash Characteristics
Num
C
Characteristic
Symbol
Min
Typical
Max
Unit
1
D
Supply voltage for program/erase
Vprog/erase
2.7
—
5.5
V
2
D
Supply voltage for read operation
VRead
2.7
—
5.5
V
3
D
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
4
D
Internal FCLK period (1/FCLK)
tFcyc
5
—
6.67
μs
5
P
Byte program time (random location)2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
tprog
9tFcyc
6
P
Byte program time (burst mode)2
tBurst
4tFcyc
7
P
Page erase time2
tPage
4000
tFcyc
8
P
Mass erase time2
tMass
20,000
tFcyc
9C
Program/erase endurance3
TL to TH = –40 °C to 125 °C
T = 25
°C
3 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
nFLPE
10,000
—
100,000
—
cycles
10
C
Data retention4
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
MC
Temperature range
Family
Memory
Status
Core
(C = –40
°C to 85 °C)
(9 = Flash-based)
E
9 S08 SE
XX
RoHS compliance indicator (E = yes)
(MC = Fully Qualified)
C
Package designator (see Table 16)
8
Memory Size (in KB)
(V = –40
°C to 105 °C)
(M = –40
°C to 125 °C)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC9S08SE8CWLR | 制造商:Freescale Semiconductor 功能描述:LOW COST 8 BIT 5V MCU - Tape and Reel |
| MC9S08SE8MRL | 功能描述:8位微控制器 -MCU LO COST 8 BIT 5V MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08SE8MTG | 功能描述:8位微控制器 -MCU LO COST 8 BIT 5V MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08SE8MWL | 功能描述:8位微控制器 -MCU LO COST 8 BIT 5V MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08SE8VRL | 功能描述:8位微控制器 -MCU LO COST 8 BIT 5V MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
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